Datasheet > TPSMB30A

TPSMB30A

更新时间： 2024-11-29 19:42:47

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管
页数	文件大小	规格书
6页	998K
描述
Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

TPSMB30A 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PDSO-J2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	1.67	Is Samacsys：	N
其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY	最大击穿电压：	31.5 V
最小击穿电压：	28.5 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-J2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	参考标准：	AEC-Q101
最大重复峰值反向电压：	25.6 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	J BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

TPSMB30A 数据手册

TVS Diodes

Surface Mount – 600W > TPSMB series

Pb e3

RoHS

TPSMB Series

Description

Uni-directional

Bi-directional

TheTPSMB series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

• High reliability application • Fast response time:

and automotive grade AEC

Q101 qualiﬁed

typically less than 1.0ns

from 0V to V_BRmin

Agency Approvals

• Surface mount component • Excellent clamping

to optimize board space

• Low proﬁle package

•Typical failure mode is

short from over-speciﬁed

voltage or current

capability

• Low incremental surge

resistance

• Typical I_R≤ 1µA for

V_R>10.2V

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• Whisker test is conducted • UL Recognized compound

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

meeting ﬂammability

rating V-0

Parameter

Symbol

P_PPM

Value

600

Unit

• Meet MSL level1,

per J-STD-020, High

temperature soldering

guaranteed: 260°C/10

seconds at terminals

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

Peak Pulse Power Dissipation by

10/1000µs waveform

(Fig.1)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat

sink atT_L=50^OC

P_M(AV)

I_FSM

5.0

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

100

30kV(Air), 30kV (Contact)

Maximum Instantaneous Forward

Voltage at 50A for Unidirectional

only

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Glass passivated chip

junction

• 600W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

V_F

T_J

3.5

Operating JunctionTemperature

Range (V_BR≤ 91V)

-65 to 175

Operating JunctionTemperature

Range (V_BR> 91V)

°C

T_J

-65 to 150

-65 to 175

StorageTemperature Range

T_STG

R_θJL

TypicalThermal Resistance Junction

to Lead

°C/W

TypicalThermal Resistance Junction

to Ambient

100

R_θJA

Notes:

1. Non-repetitive current pulse, per Fig.4 and derated aboveT_A=25ºC per Fig. 3.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only,duty cycle=4 per minute maximum.

4. VF < 3.5V for part number below 300A, VF < 5.0V for part number with 300A or above.

Applications

Functional Diagram

TVS components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Automotive applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 12/06/17

12 3 4 5 6

中文翻译

下载PDF

TPSMB30A 替代型号

型号	品牌	替代类型	描述	数据表
P6SMBJ30A	LITTELFUSE	完全替代	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Supressors
P6SMB30A	LITTELFUSE	类似代替	Transient Voltage Suppression Diodes
SMBJ30A	VISHAY	类似代替	SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SU

与TPSMB30A相关器件

型号	品牌	获取价格	描述	数据表
TPSMB30A/2	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB30A/2T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB30A/5	VISHAY	获取价格	Trans Voltage Suppressor Diode, 25.6V V(RWM), Unidirectional,
TPSMB30A/55T	VISHAY	获取价格	暂无描述
TPSMB30A/5T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB30A-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB30A-E3/52T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTI
TPSMB30A-HE3/5	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB30AHE3/52T	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB30A-HE3/52T	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2

与TPSMB30A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

51
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

TPSMB30A

TPSMB30A 技术参数

TPSMB30A 数据手册

TPSMB30A 替代型号

与TPSMB30A相关器件

与TPSMB30A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TPSMB30A

TPSMB30A 技术参数

TPSMB30A 数据手册

TPSMB30A 替代型号

与TPSMB30A相关器件

与TPSMB30A相关文章

您还可以找

您在本页遇到什么问题？