Datasheet > TPSMA33A

TPSMA33A

更新时间： 2024-11-30 20:58:35

品牌	Logo	应用领域
鲁光 - LGE		局域网光电二极管
页数	文件大小	规格书
3页	968K
描述
暂无描述

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPSMA33A 技术参数

Case Style：	SMA	Ppk(W)：	400
MIN_(V)：	31.35	MAX_(V)：	34.65
Vwm_(V)：	28.2	Ir_(uA)：	1
Ippm_(A)：	8.75	Vc_(V)：	45.7
class：	Diodes

TPSMA33A 数据手册

TPSMA Series

Breakdown Voltage: 12 to 100 V

Peak Pulse Power: 400 W

Surface Mount

Transient Voltage Suppressors

SMA/ DO-214AC

Features

● Glass passivated chip

●

400 W peak pulse power capability with a

0.179 [4.55]

0.161 [4.10]

10/1000 μs waveform, repetitive rate (duty

cycle):0.01 %

●

High reliability application and automotive

grade AEC Q101 qualified

0.064 [1.63]

0.048 [1.23]

0.109 [2.76]

0.099 [2.51]

● Low leakage

● Uni and Bidirectional unit

● Excellent clamping capability

● Very fast response time

● RoHS compliant

0.012 [0.30]

0.006 [0.15]

Mechanical Data

● Case: Molded plastic

0.089 [2.26]

0.077 [1.96]

● Epoxy: UL 94V-0 rate flame retardant

0.008 [0.20]

0.059 [1.51]

0.030 [0.75]

●

Lead: Solderable per MIL-STD-750, method

[0.00]

2026

0.206 [5.22]

0.192 [4.87]

● Polarity: Color band denotes cathode end

except Bipolar

● Mounting position: Any

Maximum Ratings(T_A=25℃ unless otherwise noted)

Value

Unit

Parameter

Symbol

P_PP

Peak power dissipation with a 10/1000μs waveform⁽¹⁾

400

See Next Table

1.0

Peak pulse current with a 10/1000μs waveform⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C

Peak forward surge current, 8.3 ms single half sine-wave

unidirectional only⁽²⁾

Maximum instantaneous forward voltage at 25 A for

unidirectional only

I_PP

P_D

I_FSM

V_F

3.5

Operating junction and storage temperature range

(V_BR≤ 47V)

Operating junction and storage temperature range

- 55 to +175

- 55 to +150

°C

T_J, T_STG

(V_BR> 47V)

Note:

(1)Non-repetitive current pulse per Fig.5 and derated above T_A= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

下载PDF

与TPSMA33A相关器件

型号	品牌	获取价格	描述	数据表
TPSMA33A/5A	VISHAY	获取价格	Trans Voltage Suppressor Diode, 28.2V V(RWM), Unidirectional,
TPSMA33A-HE3/11	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient
TPSMA33AHE3/5A	VISHAY	获取价格	400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN
TPSMA33A-HE3/5A	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMA33AHE3/5AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMA33AHE3/61T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMA33AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMA33AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMA33AHE3_B/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMA33AHE3_B/I	VISHAY	获取价格	TVS DIODE 28.2V 45.7V DO214AC

与TPSMA33A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

TPSMA33A

TPSMA33A 技术参数

TPSMA33A 数据手册

与TPSMA33A相关器件

与TPSMA33A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TPSMA33A

TPSMA33A 技术参数

TPSMA33A 数据手册

与TPSMA33A相关器件

与TPSMA33A相关文章

您还可以找

您在本页遇到什么问题？