TPS79015, TPS79018, TPS79025, TPS79028, TPS79030
ULTRALOW-POWER LOW-NOISE 50-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001
50-mA Low-Dropout Regulator
Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
DBV PACKAGE
(TOP VIEW)
1
2
3
5
OUT
IN
Output Noise Typically 56 µV
(TPS79030)
RMS
GND
Only 17 µA Quiescent Current at 50 mA
1 µA Quiescent Current in Standby Mode
4
BYPASS
EN
Dropout Voltage Typically 57 mV at 50 mA
(TPS79030)
TPS79030
GROUND CURRENT
vs
JUNCTION TEMPERATURE
Over Current Limitation
–40°C to 125°C Operating Junction
Temperature Range
22
21
20
19
18
17
16
15
V = 4 V
5-Pin SOT-23 (DBV) Package
I
C
= 4.7 µF
o
description
The TPS790xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
I
O
= 50 mA
I
O
= 1 mA
TPS79030 exhibits only 56 µV
of output
RMS
voltage noise using 0.01 µF bypass and 10 µF
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS790xx series devices are ideal for
micropower operations, low output noise, and
where board space is limited.
–40 –25 –10
5
20 35 50 65 80
110 125
95
T
J
– Junction Temperature – °C
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 57 mV at
50 mA of load current (TPS79030), and is directly
proportional to the load current. The quiescent
current is ultralow (17 µA typically) and is stable
over the entire range of output load current (0 mA
to 50 mA). Intended for use in portable systems
such as laptops and cellular phones, the
ultralow-dropout voltage feature and ultralow-
power operation result in a significant increase in
system battery operating life.
1200
1000
800
V = 4 V
I
C
C
= 4.7 µF
o
(byp)
= 0.1 µF
600
400
I
= 50 mA
O
I
= 1 mA
O
200
0
100
1k
10k
100k
f – Frequency – Hz
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265