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TPS65562RGTT PDF预览

TPS65562RGTT

更新时间： 2024-11-15 12:47:11
品牌 Logo 应用领域
德州仪器 - TI 驱动器电源电路电源管理电路闪光灯双极性晶体管
页数 文件大小 规格书
16页 668K
描述
INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER

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TPS65562RGTT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：QFN
包装说明：QFN-16针数：16
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
Is Samacsys：N模拟集成电路 - 其他类型：BATTERY CHARGE CONTROLLER
控制模式：CURRENT-MODE控制技术：PULSE WIDTH MODULATION
最大输入电压：4 V最小输入电压：2.7 V
标称输入电压：3 VJESD-30 代码：S-PQCC-N16
JESD-609代码：e4长度：3 mm
湿度敏感等级：2功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-35 °C最大输出电流：3 A
封装主体材料：PLASTIC/EPOXY封装代码：HVQCCN
封装形状：SQUARE封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1 mm表面贴装：YES
切换器配置：SINGLE温度等级：OTHER
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3 mm
Base Number Matches：1

TPS65562RGTT 数据手册

 浏览型号TPS65562RGTT的Datasheet PDF文件第2页浏览型号TPS65562RGTT的Datasheet PDF文件第3页浏览型号TPS65562RGTT的Datasheet PDF文件第4页浏览型号TPS65562RGTT的Datasheet PDF文件第5页浏览型号TPS65562RGTT的Datasheet PDF文件第6页浏览型号TPS65562RGTT的Datasheet PDF文件第7页 
TPS65562  
www.ti.com  
SLVS775–JUNE 2007  
INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER  
FEATURES  
APPLICATIONS  
•
Digital Still Cameras  
•
High Integrated Solution to Reduce  
Components  
•
Optical Film Cameras  
•
•
•
Integrated Voltage Reference  
Integrated 50-V Power Switch  
DESCRIPTION/ORDERING  
INFORMATION  
Integrated Insulated Gated BiPolar Transistor  
(IGBT) Driver  
This device offers a complete solution for charging  
photo flash capacitor from battery input, and  
subsequently discharging the capacitor to a xenon  
flash tube. This device has an integrated voltage  
reference, power switch, IGBT driver, and control  
logic blocks for charging applications and driving  
IGBT application. Compared with discreet solutions,  
this device reduces the component count, shrinks the  
solution size, and eases designs for xenon tube  
•
•
•
•
•
•
•
•
High Efficiency  
Programmable Peak Current, 0.9 A ~ 1.8 A  
Input Voltage of 1.6 V to 12 V  
Optimized Control Loop for Fast Charge Time  
Isolate IGBT VCC from VCC  
Output Voltage Feedback From Primary Side  
16-pin QFN Package  
application. Additional advantages are  
charging time and high efficiency from an optimized  
pulse width modulation (PWM) control algorithm.  
a
fast  
Protection  
–
–
–
MAX On Time  
MAX Off Time  
Other provisions of the device includes sensing the  
output voltage from the primary side, programmable  
peak current, thermal shutdown, an output pin for  
charge completion, and input pins for charge enable  
and flash enable.  
Over Current Shutdown to Monitor VDS at  
SW Pin (OVDS)  
–
Thermal Disable  
D1  
C1  
VA  
VOUT  
T1  
VCC  
VCC  
IGBT_VCC  
IGBT_VCC  
SW  
VBAT  
V
I/F  
V
I/F  
CHG  
DQ  
F1  
Controller  
R1  
XFULL  
or  
OV  
DS  
DQ  
F2  
ENA  
VCC  
U1  
ENA  
U0  
V_FULL  
D/A Conv.  
or  
U2  
MAX ON  
LOGIC  
TSD  
I_PEAK  
PGND  
I_PEAK  
ref  
Analog  
Circuit  
SW  
Vref  
U3  
IGBT_VCC  
U4  
G_IGBT  
SW1  
F_ON  
or  
ENA  
IGBT  
(NC)  
Figure 1. Typical Application Circuit  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007, Texas Instruments Incorporated  
 
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