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TPS2330

更新时间： 2024-11-13 22:50:39
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德州仪器 - TI 断路器功率控制控制器
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20页 346K
描述
SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING

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TPS2330 数据手册

 浏览型号TPS2330的Datasheet PDF文件第2页浏览型号TPS2330的Datasheet PDF文件第3页浏览型号TPS2330的Datasheet PDF文件第4页浏览型号TPS2330的Datasheet PDF文件第5页浏览型号TPS2330的Datasheet PDF文件第6页浏览型号TPS2330的Datasheet PDF文件第7页 
TPS2330, TPS2331  
SINGLE HOT SWAP POWER CONTROLLER WITH  
CIRCUIT BREAKER AND POWER-GOOD REPORTING  
SLVS277A – MARCH 2000– REVISED APRIL 2000  
D OR PW PACKAGE  
(TOP VIEW)  
features  
Single-Channel High-Side MOSFET Driver  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
GATE  
DGND  
TIMER  
VREG  
VSENSE  
AGND  
ISENSE  
DISCH  
ENABLE  
PWRGD  
FAULT  
ISET  
Input Voltage: 3 V to 13 V  
Inrush Current Limiting With dv/dt Control  
Circuit-Breaker Control With Programmable  
Current Limit and Transient Timer  
AGND  
IN  
Power-Good Reporting With Transient  
Filter  
8
CMOS- and TTL-Compatible Enable Input  
NOTE: Terminal 13 is active high on TPS2331.  
Low 5-µA Standby Supply Current . . . Max  
typical application  
Available in 14-Pin SOIC and TSSOP  
Package  
V
O
+
VIN  
–40°C to 85°C Ambient Temperature Range  
3 V – 13 V  
DISCH  
IN  
ISET  
GATE  
ISENSE  
Electrostatic Discharge Protection  
VSENSE  
VREG  
applications  
AGND  
DGND  
Hot-Swap/Plug/Dock Power Management  
Hot-Plug PCI, Device Bay  
TPS2330  
PWRGD  
FAULT  
TIMER  
Electronic Circuit Breaker  
ENABLE  
description  
The TPS2330 and TPS2331 are single-channel hot-swap controllers that use external N-channel MOSFETs  
as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP),  
inrush-current control, output-power status reporting, and separation of load transients from actual load  
increases, are critical requirements for hot-swap applications.  
The TPS2330/31 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure  
the device is off at start-up and confirm the status of the output voltage rails during operation. An internal charge  
pump, capableofdrivingmultipleMOSFETs, providesenoughgate-drivevoltagetofullyenhancetheN-channel  
MOSFETs. The charge pump controls both the rise times and fall times (dv/dt) of the MOSFETs, reducing power  
transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent  
conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during  
power-state transitions, to disregard transients for a programmable period.  
AVAILABLE OPTIONS  
PACKAGES  
PIN  
COUNT  
T
A
HOT-SWAP CONTROLLER DESCRIPTION  
ENABLE  
ENABLE  
Dual-channel with independent OCP and adjustable PG  
Dual-channel with interdependent OCP and adjustable PG  
20  
20  
TPS2300IPW  
TPS2310IPW  
TPS2301IPW  
TPS2311IPW  
TPS2320ID  
TPS2320IPW  
TPS2321ID  
TPS2321IPW  
–40°C to 85°C  
Dual-channel with independent OCP  
16  
14  
TPS2330ID  
TPS2330IPW  
TPS2331ID  
TPS2331IPW  
Single-channel with OCP and adjustable PG  
†
The packages are available left-end taped and reeled (indicated by the R suffix on the device type; e.g., TPS2331IPWR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...20

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TPS2330 替代型号

型号 品牌 替代类型 描述 数据表
TPS2331 TI

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