TPS2062C, TPS2066C
TPS2060C, TPS2064C
TPS2002C, TPS2003C
SLVSAX6C –OCTOBER 2011–REVISED JUNE 2012
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ELECTRICAL CHARACTERISTICS
–40°C ≤ (TJ = TA) ≤ 125°C, 4.5 V ≤ VIN ≤ 5.5 V, VENx = VIN or VENx = 0 V, IOUTx = 0 A, typical values are at 5 V and 25°C
(unless otherwise noted)
PARAMETER
POWER SWITCH
TEST CONDITIONS(1)
MIN
TYP
MAX UNIT
DGN
D
70
90
70
70
112
TPS2062C and 66C (1 A)
135
mΩ
112
rDS(on)
On-resistance
TPS2060C and 64C (1.5 A)
TPS2002C and 03C (2 A)
112
ENABLE INPUT (ENx or ENx)
ENx (ENx), High-level input
voltage
VIH
4.5 V ≤ VIN ≤ 5.5 V
2
ENx (ENx), Low-level input
Voltage
V
VIL
0.8
Hysteresis
VIN = 5 V
0.14
0
Leakage current
VENx = 5.5 V or 0 V, VENx = 0 V or 5.5 V
-1
1
µA
ms
VIN = 5 V, CL = 1 µF, RL = 100 Ω, ENx ↑ or
ENx ↓, See Figure 4, Figure 5, and Figure 2
ton
Turn-on time
Turn-off time
1 A, 1.5 A, 2 A Rated
1.4
1.9
2.4
VIN = 5 V, CL = 1 µF, RL = 100 Ω, ENx ↑ or
EN ↓, See Figure 4, Figure 5, and Figure 2
toff
ms
1 A, 1.5 A, 2 A Rated
1.95
0.58
0.33
2.60
0.82
0.47
3.25
1.15
0.66
CL = 1 µF, RL = 100 Ω, see Figure 3
1 A, 1.5 A, 2 A Rated
tr
tf
Rise time, output
Fall time, output
ms
ms
CL = 1 µF, RL = 100 Ω, see Figure 3
1 A, 1.5 A, 2 A Rated
CURRENT LIMIT
TPS2062C/66C (1 A)
1.12
1.72
2.22
1.61
2.29
2.96
2.10
2.86
3.7
IOS
Current-limit, See Figure 7
TPS2060C and 64C (1.5 A)
TPS2002C and 03C (2 A)
A
VIN = 5 V (see Figure 6), One-half full load → R(SHORT)
50 mΩ, measure from application to when current falls
below 120% of final value
=
tIOS
Short-circuit response time(2)
2
µs
SUPPLY CURRENT
ISD
Supply current, switch disabled
Standard conditions, I(OUTx) = 0 mA
Standard conditions, I(OUTx) = 0 mA
0.01
10
90
Supply current, single switch
enabled
IS1E
µA
Supply current, both switches
enabled
IS2E
ILKG
Standard conditions, I(OUTx) = 0 mA
150
Reverse leakage current
VOUT = 5.5 V, VIN = 0 V, measured I(OUTx)
0.20
0.14
UNDERVOLTAGE LOCKOUT
UVLO
Low-level input voltage, IN
Hysteresis, IN(2)
VIN rising
3.4
4.0
V
V
FLTx
Output low voltage, FLTx
Off-state leakage
FLTx deglitch
I(FLTx) = 1 mA
0.2
1
V
V(FLTx) = 5.5 V
µA
ms
FLTx overcurrent assertion/deassertion
7
10
13
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purposes of TI’s
product warranty.
4
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