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TPJ308R-STYLE-B PDF预览

TPJ308R-STYLE-B

更新时间: 2024-11-28 07:50:11
品牌 Logo 应用领域
急速微 - ALLEGRO 晶体管
页数 文件大小 规格书
3页 107K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA

TPJ308R-STYLE-B 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknown风险等级:5.76
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):3.5 pFJEDEC-95代码:TO-226AA
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

TPJ308R-STYLE-B 数据手册

 浏览型号TPJ308R-STYLE-B的Datasheet PDF文件第2页浏览型号TPJ308R-STYLE-B的Datasheet PDF文件第3页 

与TPJ308R-STYLE-B相关器件

型号 品牌 获取价格 描述 数据表
TPJ308R-STYLE-E ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ308R-STYLE-F ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ308-STYLE-A ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ308-STYLE-C ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ308-STYLE-G ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ309 ETC

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TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | TO-226AA
TPJ309R ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ309R-STYLE-A ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ309R-STYLE-D ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
TPJ309R-STYLE-E ALLEGRO

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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A