Datasheet > TPD65R4K3C

TPD65R4K3C

更新时间： 2024-04-09 18:58:56

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
10页	577K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPD65R4K3C 数据手册

TPA65R4K3C,TPP65R4K3C,TPU65R4K3C,TPD65R4K3C

Wuxi Unigroup Microelectronics Company

Specifications T_J= 25ºC, unless otherwise noted

Value

Typ.

Parameter

Symbol

Test Conditions

Unit

Min.

Max.

Static

Drain-Source Breakdown Voltage

V_(BR)DSS

V_GS= 0V, I_D= 250µA

650

V_DS= 650V, V_GS= 0V, T_J= 25ºC

Zero Gate Voltage Drain Current

I_DSS

μA

_DS= 650V, V_GS= 0V, T_J= 150ºC

100

±100

4.0

4.3

Gate-Source Leakage

Gate-Source Threshold Voltage

Drain-Source On-Resistance (Note3)

Forward Transconductance (Note3)

Dynamic

I_GSS

V_GS(th)

R_DS(on)

g_fs

_GS= ±30V

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 0.7A

V_DS= 10V, I_D= 0.7A

2.5

3.6

1.0

Ω

Input Capacitance

C_iss

C_oss

C_rss

Q_g

120

_GS= 0V,

Output Capacitance

V_DS= 50V,

f = 1.0MHz

Reverse Transfer Capacitance

Total Gate Charge

4.1

0.7

2.5

_DD= 520V, I_D= 1.4A,

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

t_d(on)

t_r

V_GS= 10V

Turn-on Delay Time

Turn-on Rise Time

_DD= 400V, I_D= 1.4A,

R_G= 25Ω

Turn-off Delay Time

t_d(off)

t_f

Turn-off Fall Time

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

Pulsed Diode Forward Current

Body Diode Voltage

I_S

I_SM

V_SD

t_rr

1.4

5.6

1.2

T_C= 25ºC

T_J= 25ºC, I_SD= 1.4A, V_GS= 0V

0.9

76.6

0.3

3.1

μC

Reverse Recovery Time

V_R= 400V, I_F= I_S,

di_F/dt = 100A/μs

Reverse Recovery Charge

Q_rr

I_rrm

Peak Reverse Recovery Current

Notes

1. Repetitive Rating: Pulse Width limited by maximum junction temperature

2. I_AS= 0.5A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%

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