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TPCL4203 PDF预览

TPCL4203

更新时间: 2024-11-09 12:48:59
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体电池小信号场效应晶体管开关
页数 文件大小 规格书
12页 379K
描述
Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications

TPCL4203 技术参数

是否Rohs认证: 不符合生命周期:Lifetime Buy
零件包装代码:LGA包装说明:GRID ARRAY, S-PBGA-B4
针数:4Reach Compliance Code:unknown
风险等级:5.74Is Samacsys:N
配置:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PBGA-B4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:GRID ARRAY
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.65 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子形式:BUTT
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPCL4203 数据手册

 浏览型号TPCL4203的Datasheet PDF文件第2页浏览型号TPCL4203的Datasheet PDF文件第3页浏览型号TPCL4203的Datasheet PDF文件第4页浏览型号TPCL4203的Datasheet PDF文件第5页浏览型号TPCL4203的Datasheet PDF文件第6页浏览型号TPCL4203的Datasheet PDF文件第7页 
TPCL4203  
MOSFETs Silicon N-Channel MOS (U-MOS)  
TPCL4203  
1. Applications  
Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications  
Note: The product(s) described herein should not be used for any other application.  
2. Features  
(1) Small, thin package  
(2) Low source-source on-resistance: RSS(ON) = 27 m(typ.) (VGS = 4.5 V)  
(3) Low leakage current: ISSS = 10 µA (max) (VSS = 24 V)  
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA)  
(5) Common drain  
3. Packaging and Internal Circuit  
1: Source 1  
2: Gate 1  
3: Gate 2  
4: Source 2  
ChipLGA  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Source-source voltage  
Gate-source voltage  
Source current (DC)  
Source current (pulsed)  
Power dissipation  
VSSS  
VGSS  
IS  
24  
±12  
(Note 1)  
(Note 1)  
6
A
ISP  
24  
(t = 10 s)  
(t = 10 s)  
(Note 2), (Note 4)  
(Note 3), (Note 4)  
PD  
0.50  
1.65  
150  
W
W
Power dissipation  
PD  
Channel temperature  
Storage temperature  
Tch  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2011-02-01  
Rev.3.0  
1

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