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TPA2010D1_06

更新时间： 2024-11-21 03:58:47
品牌 Logo 应用领域
德州仪器 - TI 放大器功率放大器LTE
页数 文件大小 规格书
23页 592K
描述
2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER

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TPA2010D1_06 数据手册

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TPA2010D1  
www.ti.com  
SLOS417B–OCTOBER 2003–REVISED JULY 2006  
2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER  
FEATURES  
APPLICATIONS  
•
Ideal for Wireless or Cellular Handsets and  
PDAs  
•
Maximum Battery Life and Minimum Heat  
– Efficiency With an 8-Ω Speaker:  
• 88% at 400 mW  
DESCRIPTION  
• 80% at 100 mW  
The TPA2010D1 (sometimes referred to as  
– 2.8-mA Quiescent Current  
– 0.5-µA Shutdown Current  
Only Three External Components  
TPA2010) is  
a 2.5-W high efficiency filter-free  
class-D audio power amplifier (class-D amp) in a  
1,45 mm × 1,45 mm wafer chip scale package  
(WCSP) that requires only three external  
components.  
•
– Optimized PWM Output Stage Eliminates  
LC Output Filter  
Features like 88% efficiency, –75-dB PSRR,  
improved RF-rectification immunity, and 8 mm2 total  
PCB area make the TPA2010D1 (TPA2010) class-D  
amp ideal for cellular handsets. A fast start-up time  
of 1 ms with minimal pop makes the TPA2010D1  
(TPA2010) ideal for PDA applications.  
– Internally Generated 250-kHz Switching  
Frequency Eliminates Capacitor and  
Resistor  
– Improved PSRR (–75 dB) and Wide Supply  
Voltage (2.5 V to 5.5 V) Eliminates Need for  
a Voltage Regulator  
In cellular handsets, the earpiece, speaker phone,  
and melody ringer can each be driven by the  
TPA2010D1. The TPA2010D1 allows independent  
gain while summing signals from seperate sources,  
and has a low 36 µV noise floor, A-weighted.  
– Fully Differential Design Reduces RF  
Rectification and Eliminates Bypass  
Capacitor  
– Improved CMRR Eliminates Two Input  
Coupling Capacitors  
•
Wafer Chip Scale Packaging (WCSP)  
– NanoFree™ Lead-Free (YZF)  
– NanoStar™ SnPb (YEF)  
APPLICATION CIRCUIT  
9-BALL  
WAFER CHIP SCALE  
YZF, YEF PACKAGES  
To Battery  
TPA2010D1 DIMENSIONS  
(TOP VIEW OF PCB)  
Internal  
V
DD  
Oscillator  
C
S
R
R
I
+
-
IN-  
IN+  
A1  
GND  
A2  
V
O-  
V
O+  
PWM  
H-  
_
+
A3  
Differential  
Input  
Bridge  
V
O-  
V
DD  
PV  
DD  
GND  
B3  
I
1,55 mm  
1,40 mm  
IN+  
B1  
B2  
GND  
Bias  
IN-  
C1  
SHUTDOWN  
C2  
V
O+  
SHUTDOWN  
Circuitry  
C3  
TPA2010D1  
1,55 mm  
1,40 mm  
Note: Pin A1 is marked with a “0” for  
Pb-free (YZF) and a “1” for SnPb (YEF).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoFree, NanoStar are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2003–2006, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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