Datasheet > TP4L20

TP4L20

更新时间： 2024-11-30 23:37:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	338K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 200V V(BR)CEO \| 4A I(C) \| TO-225VAR

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中文翻译

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数据手册

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TP4L20 数据手册

SHINDENGEN

DarlingtonTransistor

OUTLINE DIMENSIONS

Case : ITO-220

2SD1789

(TP4L20)

Unit : mm

4A NPN

RATINGS

Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

-55`+150

Unit

Storage Temperature

Tstg

V_CBO

V_CEO

V_EBO

I_C

Junction Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current DC

+150

200

Collector Current Peak

Base Current DC

I_CP

I_B

0.3

Base Current Peak

I_BP

0.5

Total Transistor Dissipation

Dielectric Strength

P_T

Vdis

TOR

Tc = 25

0.5

N¥m

Terminals to case AC 1 minute

(Recommended torque : 0.3N¥mj

Mounting Torque

Electrical Characteristics (Tc=25)

Item

Symbol

I_CBO

Conditions

V_CB= 200V

Ratings

Max 0.1

Max 5

Unit

Collector Cutoff Current

I_CEO

V_CE= 200V

Emitter Cutoff Current

DC Current Gain

I_EBO

V_EB= 7V

h_FE

V_CE= 3V, I_C= 1A

Min 1,500

Max 30,000

Max 1.5

Max 2.0

Max 5.0

TYP 20

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Thermal Resistance

V_CE(sat)

V_BE(sat)

Æjc

I_C= 1A

I_B= 2mA

Junction to case

V_CE= 10V, I_C= 0.4A

MHz

Transition Frequency

f_T

Turn on Time

ton

Max 2

I_C= 1A

Storage Time

Fall Time

I_B1= I_B2= 2mA

R_L= 25¶

V_BB2= 4V

Max 12

Max 5

Ês

12 3 4 5 6 7 8

中文翻译

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