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TN7212PM PDF预览

TN7212PM

更新时间: 2024-11-25 14:45:15
品牌 Logo 应用领域
APITECH 射频微波
页数 文件大小 规格书
1页 63K
描述
Wide Band Low Power Amplifier, 30MHz Min, 200MHz Max, SM3, 4 PIN

TN7212PM 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.68Is Samacsys:N
其他特性:I/P POWER-MAX (PEAK)=27DBM构造:COMPONENT
增益:7.5 dB最大输入功率 (CW):15 dBm
最大工作频率:200 MHz最小工作频率:30 MHz
最高工作温度:85 °C最低工作温度:-55 °C
射频/微波设备类型:WIDE BAND LOW POWER最大电压驻波比:2
Base Number Matches:1

TN7212PM 数据手册

  
Available as: TM7212PM, 4 Pin TO-8 (T4)  
TN7212PM, 4 Pin Surface Mount (SM3)  
RFAMPLIFIER  
FP7212PM, 4 Pin Flatpack (FP4)  
BX7212PM, Connectorized Housing (H1)  
MODEL TM7212PM  
Features  
Maximum Ratings  
! Superior Phase Noise Performance  
! Low Noise Figure: 1.8 dB Typical  
! Lower +12 Vdc Supply  
Ambient Operating Temperature.................-55ºC to +100 ºC  
Storage Temperature.................................-62ºC to +125 ºC  
Case Temperature..................................................+125 ºC  
DC Voltage..........................................................+15 Volts  
Continuous RF Input Power...................................+15 dBm  
Short Term RF Input Power...... 50 Milliwatts (1 Minute Max.)  
Maximum Peak Power.................... 0.5 Watt (3 µsec Max.)  
Thermal Resistance (Theta J C) ....................... 81 ºC/Watt  
Junction Temperature RiseAbove the Case Temp........+24ºC  
Maximum Operating Junction Temperature...............+109ºC  
Maximum Junction Temperature of Die.....................+205ºC  
! Operating Temp. -55 ºC to +85 ºC  
Specifications  
CHARACTERISTIC  
TYPICAL  
Ta= 25 ºC  
10 - 200 MHz  
MIN/MAX  
Ta = -55 ºC to +85 ºC  
30 - 200 MHz  
Frequency  
Gain (dB)  
8.5  
7.5 Min.  
Power @ 1 dB  
Comp. (dBm)  
Reverse  
+20  
-12  
+19 Min.  
-11 Max.  
Isolation (dB)  
MTBF Calculation for Ground Benign Environment  
@ 25 ºC .................................................4,067,101.04 hrs  
VSWR  
In  
Out  
<1.75:1  
<1.35:1  
2.0:1 Max.  
2.0:1 Max.  
Noise Figure (dB)  
Power Vdc  
mA  
1.8  
3.0 Max.  
Guaranteed Phase Noise Performance (dBc/Hz)  
+12  
30  
+12  
33 Max.  
Frequency  
Typical  
Guarantee (Min.)  
-172  
100 Hz  
1 kHz  
-168  
-174  
Note: Care should always be taken to effectively ground the case of each unit.  
-178  
Typical Intermodulation Performance at 25 ºC  
Second Order Harmonic Intercept Point ....... +61 dBm (Typ.)  
Second OrderTwo Tone Intercept Point ........ +55 dBm (Typ.)  
Third Order TwoTone Intercept Point ............ +40 dBm (Typ.)  
10 kHz  
100 kHz  
1 MHz  
-180  
-181  
-179  
-176  
-177  
-175  
Typical Performance Data  
Gain (dB)  
Reverse Isolation (dB)  
Phase Noise (dBc/Hz)  
10  
9
0
-5  
-130  
-140  
-10  
8
7
6
-150  
-160  
-15  
-20  
Stop 200 MHz  
Start 30 MHz  
Start 30 MHz  
Start 30 MHz  
200 MHz  
Start 30 MHz1 dB Comp. (dBm)  
Noise Figure (dB)Stop  
-170  
+23  
+22  
+21  
+20  
+19  
3
2
-180  
-190  
1K  
10K  
100K  
1M  
100  
_________Guarantee __ __ __ __Typical  
1
Stop 200 MHz  
Start 30 MHz  
Stop 200 MHz  
Phase Noise Test Conditions:  
Carrier Frequency: 100 MHz  
Power Output: +20 dBm  
Temperature: 25 ºC  
Input VSWR  
Output VSWR  
2.0  
1.5  
1.0  
2.0  
1.5  
1.0  
Agilent ES5500 System  
Start 30 MHz  
Stop 200 MHz  
Stop 200 MHz  
Legend  
+25 ºC  
+85 ºC - - - - - - -55 ºC  
Rev.  
3/12/09  
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532  
Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001  
www.SpectrumMicrowave.com  

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