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TMPG06-18AHE3_A/C

更新时间： 2024-11-30 14:36:23
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 86K
描述
Trans Voltage Suppressor Diode, 400W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon,

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TMPG06-18AHE3_A/C 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：12 weeks风险等级：5.67
其他特性：EXCELLENT CLAMPING CAPABILITY最大击穿电压：18.9 V
最小击穿电压：17.1 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
最高工作温度：185 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：1 W参考标准：AEC-Q101
最大重复峰值反向电压：15.3 V表面贴装：NO
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

TMPG06-18AHE3_A/C 数据手册

 浏览型号TMPG06-18AHE3_A/C的Datasheet PDF文件第2页浏览型号TMPG06-18AHE3_A/C的Datasheet PDF文件第3页浏览型号TMPG06-18AHE3_A/C的Datasheet PDF文件第4页浏览型号TMPG06-18AHE3_A/C的Datasheet PDF文件第5页 
TMPG06-10A thru TMPG06-43A  
www.vishay.com  
Vishay General Semiconductor  
PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
MPG06  
• Low incremental resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
APPLICATIONS  
Use in sensitive electronics protection against voltage  
PRIMARY CHARACTERISTICS  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VBR  
10 V to 43 V  
8.55 V to 36.8 V  
400 W  
VWM  
PPPM  
PD  
1.0 W  
MECHANICAL DATA  
IFSM  
40 A  
Case: MPG06, molded epoxy over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
Polarity  
Package  
185 °C  
Uni-directional  
MPG06  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)(2) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 25 A (2)  
Operating junction and storage temperature range  
400  
See next table  
1.0  
A
PD  
W
IFSM  
40  
A
VF  
3.5  
V
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 04-Nov-16  
Document Number: 88404  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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