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TM2FJ64EPN-60 PDF预览

TM2FJ64EPN-60

更新时间： 2024-11-21 21:07:39
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
20页 276K
描述
2MX64 EDO DRAM MODULE, 60ns, DMA144, DIMM-144

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中文翻译

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TM2FJ64EPN-60 技术参数

生命周期：Obsolete零件包装代码：DIMM
包装说明：DIMM, DIMM144,32针数：144
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.84
访问模式：FAST PAGE WITH EDO最长访问时间：60 ns
其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型：COMMON
JESD-30 代码：R-XDMA-N144内存密度：134217728 bit
内存集成电路类型：EDO DRAM MODULE内存宽度：64
功能数量：1端口数量：1
端子数量：144字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：2MX64输出特性：3-STATE
封装主体材料：UNSPECIFIED封装代码：DIMM
封装等效代码：DIMM144,32封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：3.3 V
认证状态：Not Qualified刷新周期：4096
自我刷新：YES最大待机电流：0.0012 A
子类别：DRAMs最大压摆率：0.72 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：NO
技术：MOS温度等级：COMMERCIAL
端子形式：NO LEAD端子节距：0.8 mm
端子位置：DUALBase Number Matches：1

TM2FJ64EPN-60 数据手册

 浏览型号TM2FJ64EPN-60的Datasheet PDF文件第2页浏览型号TM2FJ64EPN-60的Datasheet PDF文件第3页浏览型号TM2FJ64EPN-60的Datasheet PDF文件第4页浏览型号TM2FJ64EPN-60的Datasheet PDF文件第5页浏览型号TM2FJ64EPN-60的Datasheet PDF文件第6页浏览型号TM2FJ64EPN-60的Datasheet PDF文件第7页 
TM2EJ64DPN, TM2FJ64DPN 2097152 BY 64-BIT  
TM2EJ64EPN, TM2FJ64EPN 2097152 BY 64-BIT  
EXTENDED-DATA-OUT DYNAMIC RAM MODULES — SODIMM  
SMMS685 – AUGUST 1997  
Organization  
High-Speed, Low-Noise LVTTL Interface  
– TM2xJ64xPN-xx . . . 2097152 × 64 Bits  
Long Refresh Period:  
Single 3.3-V Power Supply  
(±10% Tolerance)  
– TM2EJ64DPN: 32 ms (2048 cycles)  
– TM2EJ64EPN: 64 ms (4096 cycles)  
JEDEC 144-Pin Small Outline Dual-In-Line  
Memory Module (SODIMM) Without Buffer  
for Use With Socket  
Low-Power, Battery-Backup Refresh  
Available:  
– TM2FJ64DPN: 128 ms (2048 cycles)  
– TM2FJ64EPN: 128 ms (4096 cycles)  
TM2xJ64xPN-xx — Utilizes Eight 16M-Bit  
(2M×8-Bit) Dynamic RAMs in TSOPs  
3-State Output  
Performance ranges  
Extended-Data-Out (EDO) Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
ACCESS ACCESS ACCESS  
TIME TIME TIME  
EDO  
CYCLE  
t
t
t
t
RAC  
CAC  
AA  
HPC  
Serial Presence-Detect (SPD) Using  
EEPROM  
MAX  
50 ns  
60 ns  
70 ns  
MAX  
13 ns  
15 ns  
18 ns  
MAX  
25 ns  
30 ns  
35 ns  
MIN  
’2xJ64xPN-50  
’2xJ64xPN-60  
’2xJ64xPN-70  
20 ns  
25 ns  
30 ns  
Ambient Temperature Range  
0°C to 70°C  
Gold-Plated Contacts  
description  
The TM2EJ64DPN is a 16M-byte, 144-pin, small outline dual-in-line memory module (SODIMM). The SODIMM  
is composed of eight TMS427809A, 2097152 × 8-bit 2K-refresh EDO dynamic random-access memories  
(DRAMs), each in a 400-mil, 28-pin plastic thin small-outline package (TSOP) (DGC suffix) mounted on a  
substrate with decoupling capacitors. See the TMS427809A data sheet (literature number SMKS894).  
The TM2EJ64EPN is an 16M-byte, 144-pin SODIMM. The SODIMM is composed of eight TMS426809A,  
2097152 × 8-bit 4K-refresh EDO DRAMs, each in a 400-mil, 28-pin plastic TSOP (DGC suffix) mounted on a  
substrate with decoupling capacitors. See the TMS426809A data sheet (literature number SMKS894).  
The TM2FJ64DPN is a 16M-byte, 144-pin SODIMM. The SODIMM is composed of eight TMS427809AP,  
2097152 × 8-bit 2K low-power battery-backup refresh EDO DRAMs, each in a 400-mil, 28-pin plastic TSOP  
(DGC suffix) mounted on a substrate with decoupling capacitors. See the TMS427809AP data sheet (literature  
number SMKS894).  
The TM2FJ64EPN is a 16M-byte, 144-pin SODIMM. The SODIMM is composed of eight TMS426809AP,  
2097152 × 8-bit 4K low-power battery-backup refresh EDO DRAMs, each in a 400-mil, 28-pin plastic TSOP  
(DGC suffix) mounted on a substrate with decoupling capacitors. See the TMS426809AP data sheet (literature  
number SMKS894).  
operation  
The TM2xJ64xPN operates as eight TMS42x809A/Ps, connected as shown in the functional block diagram.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCT PREVIEW information concerns products in the formative or  
design phase of development. Characteristic data and other  
specifications are design goals. Texas Instruments reserves the right to  
change or discontinue these products without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...20

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