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TLV320AC36CDWR PDF预览

TLV320AC36CDWR

更新时间: 2024-11-22 13:14:47
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德州仪器 - TI /
页数 文件大小 规格书
23页 326K
描述
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TLV320AC36CDWR 数据手册

 浏览型号TLV320AC36CDWR的Datasheet PDF文件第2页浏览型号TLV320AC36CDWR的Datasheet PDF文件第3页浏览型号TLV320AC36CDWR的Datasheet PDF文件第4页浏览型号TLV320AC36CDWR的Datasheet PDF文件第5页浏览型号TLV320AC36CDWR的Datasheet PDF文件第6页浏览型号TLV320AC36CDWR的Datasheet PDF文件第7页 
TLV320AC36, TLV320AC37  
3-V VOICE-BAND AUDIO PROCESSORS (VBAP  
)
SLWS006B – NOVEMBER 1994 – REVISED OCTOBER 1997  
Single 3-V Operation  
Selectable Between 8-Bit Companded and  
13-Bit (Dynamic Range) Linear Conversion:  
– TLV320AC36 . . . µ-Law and Linear Modes  
– TLV320AC37 . . . A-Law and Linear  
Modes  
Low Power Consumption:  
– Operating Mode . . . 20 mW Typ  
– Standby Mode . . . 5 mW Typ  
– Power-Down Mode . . . 2 mW Typ  
Programmable Volume Control in Linear  
Mode  
Combined A/D, D/A, and Filters  
Extended Variable-Frequency Operation  
– Sample Rates up to 16 kHz  
– Pass-Band up to 7.2 kHz  
300 Hz – 3.6 kHz Passband with Specified  
Master Clock  
Designed for Standard 2.048-MHz Master  
Clock for U.S. Analog, U.S. Digital, CT2,  
DECT, GSM, and PCS Standards for  
Hand-Held Battery-Powered Telephones  
Electret Microphone Bias Reference  
Voltage Available  
Drive a Piezo Speaker Directly  
Compatible With All Digital Signal  
Processors (DSPs)  
PT PACKAGE  
(TOP VIEW)  
DW OR N PACKAGE  
(TOP VIEW)  
PDN  
EARA  
EARB  
MICBIAS  
MICGS  
MICIN  
VMID  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
48 47 46 45 44 43 42 41 40 39 38 37  
EARGS  
V
GND  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
VMID  
NC  
AGND  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
1
CC  
MICMUTE  
DCLKR  
DIN  
FSR  
EARMUTE  
LINSEL  
TSX/DCLKX  
DOUT  
FSX  
2
3
AV  
4
CC  
NC  
5
CLK  
NC  
NC  
NC  
6
7
8
9
DV  
CC  
10  
11  
12  
DGND  
LINSEL  
NC  
NC  
MICMUTE  
NC  
13 14 15 16 17 18 19 20 21 22 23 24  
NC – No internal connection  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
VBAP is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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