Datasheet > TLP781(D4-BL-TP6F

TLP781(D4-BL-TP6F

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		分离技术隔离技术输入元件输出元件
页数	文件大小	规格书
15页	392K
描述
NPN-OUTPUT DC-INPUT OPTOCOUPLER,1-CHANNEL,5KV ISOLATION,DIP

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中文翻译

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数据手册

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TLP781(D4-BL-TP6F 数据手册

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TLP781/TLP781F

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP781, TLP781F

TLP781

Unit: mm

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission between Different Voltage

Circuits

The TOSHIBA TLP781 consists of a silicone photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a

four lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kV

(min)).

RMS

TOSHIBA

•

TLP781 : 7.62mm pitch type DIP4

TLP781F : 10.16mm pitch type DIP4

Collector-emitter voltage: 80V (min)

Current transfer ratio: 50% (min)

Rank GB: 100% (min)

Weight: 0.25g (typ.)

Unit: mm

TLP781F

•

Isolation voltage: 5000V

(min)

rms

UL recognized: UL1577, file No. E67349

BSI approved: BS EN60065:2002

Approved no.8961

BS EN60950-1:2006

Approved no.8962

•

SEMKO approved:EN60065:2002

Approved no.800514

EN60950-1:2001, EN60335-1:2002

Approved no.800517

Option(D4)type

VDE approved : DIN EN60747-5-5

Certificate No. 40021173

TOSHIBA

Weight: 0.25g (typ.)

(Note): When an EN60747-5-5 approved type is needed,

Please designate “Option (D4)”

Pin Configurations

(top view)

•

Construction mechanical rating

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

1 : Anode

Creepage distance

Clearance

6.5mm (min)

0.4mm (min)

8.0mm (min)

0.4mm (min)

2 : Cathode

3 : Emitter

4 : Collector

Insulation thickness

Start of commercial production

2007/07

2014-09-08

12 3 4 5 6 7...15

中文翻译

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