Datasheet > TLP358F(D4)

TLP358F(D4)

更新时间： 2024-02-05 03:20:10

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东芝 - TOSHIBA		/
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数据手册

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TLP358F(D4) 数据手册

TLP358/TLP358F

TOSHIBA Photocoupler GaAℓAs IRED LED + Photo IC

TLP358,TLP358F

Industrial Inverter

TLP358

Unit: mm

MOS FET / IGBT Gate Driver

IH(Induction Heating)

The TOSHIBA TLP358 consists of a GaAℓAs light-emitting diode and an

integrated photodetector. This unit is an 8-lead DIP package.

The TLP358 is suitable for gate driving IGBTs or power MOSFETs.

The TLP358F is of a long creepage distance and clearance type.

Peak output current : I = ± 6.0A (max)

Guaranteed performance over temperature : −40 to 100°C

Supply current : I = 2 mA (max)

Power supply voltage : 15 to 30 V

Input current: I = 5mA (max)

FLH

Switching time ( t

/ t

pLH pHL)

: 500 ns (max)

Common-mode transient immunity : ±15 kV / μs (min)

Isolation voltage : 3750 Vrms (min)

TOSHIBA

11−10C4

Weight: 0.54 g (typ.)

UL under application : UL1577, File No.E67349

c-UL under application: CSA Component Acceptance Service No. 5A, File No.E67349

Option (D4)

VDE / TÜV under application: EN 60747-5-2

TLP358F

Unit: mm

Pin Configuration (top view)

1: N.C

2: Anode

3: Cathode

4: N.C

5: GND

6: N.C

7: VO (output)

8: VCC

TOSHIBA

11−10C402

Construction Mechanical Rating

Weight: 0.54 g (typ.)

7.62 mm Pitch

TLP358 Type

10.16 mm Pitch

TLP358F Type

8.0 mm (min)

0.4 mm (min)

Creepage distance

Clearance

Insulation thickness

6.4 mm (min)

0.4 mm (min)

2009-08-10

12 3 4 5 6 7...12

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