是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | QLCC |
包装说明: | QCCN, | 针数: | 20 |
Reach Compliance Code: | unknown | 风险等级: | 5.03 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
最大平均偏置电流 (IIB): | 0.03 µA | 标称共模抑制比: | 82 dB |
最大输入失调电压: | 5500 µV | JESD-30 代码: | S-CQCC-N20 |
长度: | 8.89 mm | 湿度敏感等级: | NOT SPECIFIED |
负供电电压上限: | -19 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 4 | 端子数量: | 20 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | QCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 座面最大高度: | 2.03 mm |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
供电电压上限: | 19 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | BIFET |
温度等级: | MILITARY | 端子面层: | NOT SPECIFIED |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 1300 kHz | 宽度: | 8.89 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2064BMJ | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BMJB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BMJB | ROCHESTER |
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QUAD OP-AMP, 5500uV OFFSET-MAX, 1.3MHz BAND WIDTH, CDIP14, CERAMIC, DIP-14 | |
TLE2064BMN | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064CD | ROCHESTER |
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QUAD OP-AMP, 7900uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDSO14, GREEN, PLASTIC, SOIC-14 | |
TLE2064CD | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064CDG4 | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064CDR | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064CDRG4 | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064CN | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |