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TLE2024BMDWG4 PDF预览

TLE2024BMDWG4

更新时间: 2024-11-07 11:13:59
品牌 Logo 应用领域
德州仪器 - TI 放大器运算放大器
页数 文件大小 规格书
82页 2803K
描述
Excalibur 高速低功耗精密四路运算放大器 | DW | 16 | -55 to 125

TLE2024BMDWG4 数据手册

 浏览型号TLE2024BMDWG4的Datasheet PDF文件第2页浏览型号TLE2024BMDWG4的Datasheet PDF文件第3页浏览型号TLE2024BMDWG4的Datasheet PDF文件第4页浏览型号TLE2024BMDWG4的Datasheet PDF文件第5页浏览型号TLE2024BMDWG4的Datasheet PDF文件第6页浏览型号TLE2024BMDWG4的Datasheet PDF文件第7页 
TLE202x, TLE202xA, TLE202xB, TLE202xY  
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION  
OPERATIONAL AMPLIFIERS  
ꢀ  
SLOS191D FEBRUARY 1997 REVISED NOVEMBER 2010  
D
D
D
D
D
D
Supply Current . . . 300 μA Max  
High Unity-Gain Bandwidth . . . 2 MHz Typ  
High Slew Rate . . . 0.45 V/μs Min  
D
High Open-Loop Gain . . . 6.5 V/μV  
(136 dB) Typ  
D
Low Offset Voltage . . . 100 μV Max  
Offset Voltage Drift With Time  
0.005 μV/mo Typ  
Low Input Bias Current . . . 50 nA Max  
D
Supply-Current Change Over Military Temp  
Range . . . 10 μA Typ at V  
=
15 V  
CC  
D
D
Specified for Both 5-V Single-Supply and  
15-V Operation  
Low Noise Voltage . . . 19 nV/Hz Typ  
Phase-Reversal Protection  
description  
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers  
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with  
highly improved slew rate and unity-gain bandwidth.  
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic  
improvement in unity-gain bandwidth and slew rate over similar devices.  
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both  
time and temperature. This means that a precision device remains a precision device even with changes in  
temperature and over years of use.  
This combination of excellent dc performance with a common-mode input voltage range that includes the  
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either  
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry  
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply  
rail.  
A variety of available options includes small-outline and chip-carrier versions for high-density systems  
applications.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of 55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
Copyright © 2010, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLE2024BMDWG4 替代型号

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TLE2024IDW TI

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EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS
TLE2024BMDW TI

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EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS
NE5532DR TI

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