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TLE2021IDRG4 PDF预览

TLE2021IDRG4

更新时间： 2024-11-23 05:03:59
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
72页 1491K
描述
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS

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中文翻译

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TLE2021IDRG4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.2
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.07 µA25C 时的最大偏置电流 (IIB)：0.07 µA
最小共模抑制比：85 dB标称共模抑制比：110 dB
频率补偿：YES最大输入失调电流 (IIO)：0.006 µA
最大输入失调电压：600 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
低-偏置：NO低-失调：YES
微功率：YES湿度敏感等级：1
负供电电压上限：-20 V标称负供电电压 (Vsup)：-15 V
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
电源：+-2/+-20/4/40 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.75 mm
最小摆率：0.42 V/us标称压摆率：0.5 V/us
子类别：Operational Amplifier最大压摆率：0.3 mA
供电电压上限：20 V标称供电电压 (Vsup)：15 V
表面贴装：YES技术：BIPOLAR
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：1700 kHz最小电压增益：300000
宽带：NO宽度：3.91 mm
Base Number Matches：1

TLE2021IDRG4 数据手册

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SLOS191C − FEBRUARY 1997 − REVISED APRIL 2007  
D
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Supply Current . . . 300 µA Max  
High Unity-Gain Bandwidth . . . 2 MHz Typ  
High Slew Rate . . . 0.45 V/µs Min  
D
High Open-Loop Gain . . . 6.5 V/µV  
(136 dB) Typ  
D
Low Offset Voltage . . . 100 µV Max  
Offset Voltage Drift With Time  
0.005 µV/mo Typ  
Low Input Bias Current . . . 50 nA Max  
D
Supply-Current Change Over Military Temp  
Range . . . 10 µA Typ at V  
=
15 V  
CC  
D
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Specified for Both 5-V Single-Supply and  
15-V Operation  
Low Noise Voltage . . . 19 nV/√Hz Typ  
Phase-Reversal Protection  
description  
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers  
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with  
highly improved slew rate and unity-gain bandwidth.  
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic  
improvement in unity-gain bandwidth and slew rate over similar devices.  
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both  
time and temperature. This means that a precision device remains a precision device even with changes in  
temperature and over years of use.  
This combination of excellent dc performance with a common-mode input voltage range that includes the  
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either  
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry  
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply  
rail.  
A variety of available options includes small-outline and chip-carrier versions for high-density systems  
applications.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of −55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
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Copyright 1997−2007, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...72

中文翻译

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