是否无铅: | 不含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 2.01 | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.0005 µA |
25C 时的最大偏置电流 (IIB): | 0.0005 µA | 最小共模抑制比: | 85 dB |
标称共模抑制比: | 115 dB | 频率补偿: | YES |
最大输入失调电流 (IIO): | 0.00006 µA | 最大输入失调电压: | 400 µV |
JESD-30 代码: | R-GDIP-T8 | JESD-609代码: | e0 |
长度: | 9.58 mm | 低-偏置: | YES |
低-失调: | YES | 微功率: | NO |
负供电电压上限: | -8 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 功率: | NO |
电源: | +-2.3/+-8/4.6/16 V | 可编程功率: | NO |
认证状态: | Not Qualified | 筛选级别: | 38535Q/M;38534H;883B |
座面最大高度: | 5.08 mm | 最小摆率: | 1.3 V/us |
标称压摆率: | 2.7 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 1.5 mA | 供电电压上限: | 8 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 总剂量: | 38535Q/M;38534H;883B V |
标称均一增益带宽: | 1900 kHz | 最小电压增益: | 45000 |
宽带: | NO | 宽度: | 7.62 mm |
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