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TL071MJG883B PDF预览

TL071MJG883B

更新时间： 2024-09-27 13:41:11
品牌 Logo 应用领域
德州仪器 - TI 放大器
页数 文件大小 规格书
48页 1739K
描述
OP-AMP, 0uV OFFSET-MAX, 3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8

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TL071MJG883B 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP, DIP8,.3
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.65放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK标称共模抑制比：86 dB
频率补偿：YES最大输入失调电流 (IIO)：0.02 µA
最大输入失调电压：JESD-30 代码：R-GDIP-T8
长度：9.58 mm低-偏置：YES
低-失调：NO负供电电压上限：-18 V
标称负供电电压 (Vsup)：-15 V功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, GLASS-SEALED
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
电源：+-15 V认证状态：Not Qualified
筛选级别：MIL-STD-883 Class B座面最大高度：5.08 mm
标称压摆率：0.06 V/us子类别：Operational Amplifier
供电电压上限：18 V标称供电电压 (Vsup)：15 V
表面贴装：NO技术：BIPOLAR
温度等级：MILITARY端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
标称均一增益带宽：3000 kHz宽度：7.62 mm
Base Number Matches：1

TL071MJG883B 数据手册

 浏览型号TL071MJG883B的Datasheet PDF文件第2页浏览型号TL071MJG883B的Datasheet PDF文件第3页浏览型号TL071MJG883B的Datasheet PDF文件第4页浏览型号TL071MJG883B的Datasheet PDF文件第5页浏览型号TL071MJG883B的Datasheet PDF文件第6页浏览型号TL071MJG883B的Datasheet PDF文件第7页 
TL071, TL071A, TL071B, TL072  
TL072A, TL072B, TL074, TL074A, TL074B  
LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS  
SLOS080J − SEPTEMBER 1978 − REVISED MARCH 2005  
D
D
D
D
D
Low Power Consumption  
D
Low Noise  
V = 18 nV/√Hz Typ at f = 1 kHz  
n
Wide Common-Mode and Differential  
Voltage Ranges  
D
D
D
D
D
High Input Impedance . . . JFET Input Stage  
Low Input Bias and Offset Currents  
Output Short-Circuit Protection  
Internal Frequency Compensation  
Latch-Up-Free Operation  
Low Total Harmonic Distortion  
. . . 0.003% Typ  
High Slew Rate . . . 13 V/μs Typ  
Common-Mode Input Voltage Range  
Includes V  
CC+  
description/ordering information  
The JFET-input operational amplifiers in the TL07x series are similar to the TL08x series, with low input bias  
and offset currents and fast slew rate. The low harmonic distortion and low noise make the TL07x series ideally  
suited for high-fidelity and audio preamplifier applications. Each amplifier features JFET inputs (for high input  
impedance) coupled with bipolar output stages integrated on a single monolithic chip.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of −55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright © 2005, Texas Instruments Incorporated  
On products compliant to MIL-PRF-38535, all parameters are tested  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
unless otherwise noted. On all other products, production  
testing of all parameters.  
processing does not necessarily include testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...48

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