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TK6A80E

更新时间： 2024-09-26 14:57:55

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TK6A80E 数据手册

TK6A80E

MOSFETs Silicon N-Channel MOS (π-MOS)

TK6A80E

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.)

(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)

(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

TO-220SIS

Start of commercial production

2013-12

2014-03-04

Rev.3.0

12 3 4 5 6 7...9

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