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TK6R7A10PL PDF预览

TK6R7A10PL

更新时间: 2023-12-20 18:45:30
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 612K
描述
N-ch MOSFET, 100 V, 0.0067 Ω@10V, TO-220SIS, U-MOSⅨ-H

TK6R7A10PL 数据手册

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TK6R7A10PL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK6R7A10PL  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 17 nC (typ.)  
(3) Small output charge: Qoss = 58 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 5.7 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)  
(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain  
3: Source  
TO-220SIS  
Start of commercial production  
2018-01  
©2017-2021  
2021-01-27  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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