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TK6R7A10PL

更新时间： 2023-12-20 18:45:30

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TK6R7A10PL 数据手册

TK6R7A10PL

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TK6R7A10PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 17 nC (typ.)

(3) Small output charge: Qoss = 58 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 5.7 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

TO-220SIS

Start of commercial production

2018-01

2021-01-27

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TK6R7P06PL	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0067 Ω@10V, DPAK, U-MOSⅨ
TK6R8A08QM	TOSHIBA	获取价格	N-ch MOSFET, 80 V, 0.0068 Ω@10V, TO-220SIS, U
TK6R9P08QM	TOSHIBA	获取价格	N-ch MOSFET, 80 V, 0.0069 Ω@10V, DPAK, U-MOSⅩ
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TK70001M	TOKO	获取价格	SINGLE INPUT, TWO OUTPUT SOLID STATE SWITCH
TK70001MC	TOKO	获取价格	暂无描述
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