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TK42A12N1 PDF预览

TK42A12N1

更新时间: 2024-11-29 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
9页 239K
描述
Switching Voltage Regulators

TK42A12N1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.74雪崩能效等级(Eas):92 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:120 V最大漏极电流 (Abs) (ID):88 A
最大漏极电流 (ID):88 A最大漏源导通电阻:0.0094 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):35 W最大脉冲漏极电流 (IDM):167 A
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TK42A12N1 数据手册

 浏览型号TK42A12N1的Datasheet PDF文件第2页浏览型号TK42A12N1的Datasheet PDF文件第3页浏览型号TK42A12N1的Datasheet PDF文件第4页浏览型号TK42A12N1的Datasheet PDF文件第5页浏览型号TK42A12N1的Datasheet PDF文件第6页浏览型号TK42A12N1的Datasheet PDF文件第7页 
TK42A12N1  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK42A12N1  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 7.8 m(typ.) (VGS = 10 V)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)  
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain  
3: Source  
TO-220SIS  
2012-08-30  
Rev.1.0  
1

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