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TISP44165H4BJ-S PDF预览

TISP44165H4BJ-S

更新时间: 2024-02-18 12:48:46
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
11页 332K
描述
Trigger Device

TISP44165H4BJ-S 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.62Base Number Matches:1

TISP44165H4BJ-S 数据手册

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T
TISP4165H4BJ THRU TISP4200H4BJ,  
TISP4265H4BJ THRU TISP4350H4BJ  
N
IA  
L
P
M
O
C
S
oH  
*R  
HIGH HOLDING CURRENT  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP4xxxH4BJ Overvoltage Protector Series  
ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310  
High Holding Current........................................... 225 mA min.  
SMBJ Package (Top View)  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
Low Voltage Overshoot under Surge  
1
2
R(B)  
T(A)  
V
V
DRM  
V
(BO)  
V
Device  
MDXXBG  
‘4165  
‘4180  
‘4200  
‘4265  
‘4300  
‘4350  
135  
145  
155  
200  
230  
275  
165  
180  
200  
265  
300  
350  
Device Symbol  
T
Rated for International Surge Wave Shapes  
I
TSP  
A
Waveshape  
Standard  
SD4XAA  
R
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
500  
300  
250  
200  
160  
100  
Terminals T and R correspond to the  
alternative line designators of A and B  
10/160 µs  
10/700 µs  
10/560 µs  
10/1000 µs  
ITU-T K.20/21  
FCC Part 68  
GR-1089-CORE  
Low Differential Capacitance .................................. 67 pF max.  
.............................................. UL Recognized Component  
Description  
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning  
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used  
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of  
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until  
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the  
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the  
diverted current subsides.  
How To Order  
Order As  
Embossed Tape Reeled TISP4xxxH4BJR-S  
Bulk Pack TISP4xxxH4BJ-S  
Insert xxx value corresponding to protection voltages of 165 through to 350.  
Device  
Package  
Carrier  
TISP4xxxH4BJ BJ (J-Bend DO-214AA/SMB)  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
NOVEMBER 1997 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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