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TISP4070J1BJR-S PDF预览

TISP4070J1BJR-S

更新时间： 2024-11-23 03:22:03
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
14页 277K
描述
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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中文翻译

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TISP4070J1BJR-S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AA
包装说明：SMALL OUTLINE, R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.28
其他特性：UL RECOGNIZED最大转折电压：70 V
配置：SINGLE最大断态直流电压：58 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
通态非重复峰值电流：100 A元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
表面贴装：YES端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP4070J1BJR-S 数据手册

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TISP4070J1BJ THRU TISP4395J1BJ  
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BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
H
L
E
I
o
V
A
V
*R  
A
TISP4xxxJ1BJ Overvoltage Protector Series  
Ground Return Element of Y Configuration  
-2x Current Capability of Y Upper Elements  
-Available in a Wide Range of Voltages  
SMB Package (Top View)  
-Enables Symmetrical and Asymmetrical Y Designs  
-SMB (DO-214AA) Package  
MT1  
MT2  
1
2
Ion-Implanted Breakdown Region  
-Precise and Stable Voltage  
-Low Voltage Overshoot Under Surge  
MD4JAA  
Device Symbol  
VDRM  
V(BO)  
Device  
MT2  
MT1  
V
V
TISP4070J1  
TISP4080J1  
TISP4095J1  
TISP4115J1  
TISP4125J1  
TISP4145J1  
TISP4165J1  
TISP4180J1  
TISP4200J1  
TISP4219J1  
TISP4250J1  
TISP4290J1  
TISP4350J1  
TISP4395J1  
58  
70  
65  
80  
75  
95  
90  
115  
125  
145  
165  
180  
200  
219  
250  
290  
350  
395  
100  
120  
135  
145  
155  
180  
190  
220  
275  
320  
SD4JAA  
Rated for International Surge Wave Shapes  
IPPSM  
Wave Shape  
Standard  
A
2/10  
8/20  
GR-1089-CORE  
IEC 61000-4-5  
1000  
800  
400  
350  
250  
200  
10/160  
10/700  
10/560  
10/1000  
TIA/EIA-IS-968 (FCC Part 68)  
ITU-T K.20/21/45  
TIA/EIA-IS-968 (FCC Part 68)  
GR-1089-CORE  
............................................ UL Recognized Components  
Description  
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element  
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,  
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using  
the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the  
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the  
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection  
multi-chip integrations.  
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are  
limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low-  
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the  
holding current, IH, level the devices switches off and restores normal system operation.  
How to Order  
For Standard  
For Lead Free  
Termination Finish Termination Finish  
Device  
Package  
Carrier  
Order As  
Order As  
TISP4xxxJ1BJ  
BJ (SMB/DO-214AA J-Bend)  
R (Embossed Tape Reeled)  
TISP4xxxJ1BJR  
TISP4xxxJ1BJR-S  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
SEPTEMBER 2001 - REVISED FEBRUARY 2005  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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中文翻译

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