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TISP2320F3DR PDF预览

TISP2320F3DR

更新时间： 2024-11-23 15:54:23
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
17页 531K
描述
320V, 4A, SILICON SURGE PROTECTOR, SOP-8

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中文翻译

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TISP2320F3DR 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.83
其他特性：UL RECOGNIZED最大转折电压：320 V
配置：DELTA CONNECTED, 3 ELEMENTS最大断态直流电压：240 V
JESD-30 代码：R-PDSO-G8通态非重复峰值电流：4 A
元件数量：3端子数量：8
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP2320F3DR 数据手册

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TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3  
DUAL SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
MARCH 1994 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
●
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
1
2
3
4
8
7
6
5
G
G
G
G
T
NC  
NC  
R
V
V
(BO)  
DRM  
DEVICE  
V
V
‘2240F3  
‘2260F3  
‘2290F3  
‘2320F3  
‘2380F3  
180  
200  
220  
240  
270  
240  
260  
290  
320  
380  
MDXXAE  
NC - No internal connection  
P PACKAGE  
(TOP VIEW)  
●
●
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
1
2
T
8
7
6
5
T
G
G
Rated for International Surge Wave Shapes  
3
4
G
R
G
R
I
TSP  
WAVE SHAPE  
STANDARD  
MDXXAF  
A
Specified T terminal ratings require connection of pins 1 and 8.  
Specified R terminal ratings require connection of pins 4 and 5.  
2/10 µs  
8/20 µs  
FCC Part 68  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
175  
120  
60  
10/160 µs  
10/560 µs  
0.5/700 µs  
SL PACKAGE  
(TOP VIEW)  
45  
38  
FTZ R12  
50  
1
2
3
T
G
R
10/700 µs  
VDE 0433  
50  
CCITT IX K17/K20  
REA PE-60  
50  
10/1000 µs  
35  
MDXXAG  
MD23AA  
●
Surface Mount and Through-Hole Options  
device symbol  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
D
DR  
Plastic DIP  
P
Single-in-line  
SL  
●
UL Recognized, E132482  
description  
These high voltage dual symmetrical transient  
voltage suppressor devices are designed to  
protect telecommunication applications with  
battery backed ringing against transients caused  
by lightning strikes and a.c. power lines. Offered  
in five voltage variants to meet battery and  
protection requirements they are guaranteed to  
suppress and withstand the listed international  
lightning surges in both polarities. Transients are  
initially clipped by breakdown clamping until the  
voltage rises to the breakover level, which  
causes the device to crowbar. The high crowbar  
holding current prevents d.c. latchup as the  
current subsides.  
Copyright © 1997 Texas Instruments Incorporated  
PRODUCTION DATA information is current as of  
publication date. Products conform to specifications  
per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include  
testing of all parameters.  
Designed and manufactured by Power  
Innovations, Bedford, UK. under  
private label for Texas Instruments.  
1
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