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TIP29BBA PDF预览

TIP29BBA

更新时间: 2024-11-29 13:14:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 143K
描述
1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

TIP29BBA 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.66Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP29BBA 数据手册

 浏览型号TIP29BBA的Datasheet PDF文件第2页浏览型号TIP29BBA的Datasheet PDF文件第3页浏览型号TIP29BBA的Datasheet PDF文件第4页浏览型号TIP29BBA的Datasheet PDF文件第5页 
TIP29, A, B, C (NPN),  
TIP30, A, B, C (PNP)  
Complementary Silicon  
Plastic Power Transistors  
Designed for use in general purpose amplifier and switching  
applications. Compact TO220 AB package.  
http://onsemi.com  
Features  
1 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
40, 60, 80, 100 VOLTS,  
80 WATTS  
PbFree Packages are Available*  
MAXIMUM RATINGS  
29  
30  
29A  
30A  
29B  
30B  
29C  
30C  
Rating  
Symbol  
Unit  
Collector Emitter  
V
CEO  
40  
60  
80  
100  
Vdc  
Voltage  
MARKING  
DIAGRAM  
Collector Base Voltage  
Emitter Base Voltage  
V
40  
60  
80  
100  
Vdc  
Vdc  
Adc  
CB  
V
5.0  
EB  
Collector Current  
Continuous  
Peak  
I
C
4
1.0  
3.0  
TO220AB  
CASE 221A  
STYLE 1  
TIPxxxG  
AYWW  
Base Current  
I
0.4  
Adc  
B
Total Power Dissipation  
P
D
STYLE 1:  
PIN 1. BASE  
30  
0.24  
W
W/°C  
@ T = 25°C  
C
1
Derate above 25°C  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
2
3
Total Power Dissipation  
P
D
@ T = 25°C  
Derate above 25°C  
2.0  
0.016  
W
W/°C  
A
Unclamped Inductive  
Load Energy (Note 1)  
E
32  
mJ  
TIPxxx = Device Code:  
29, 29A, 29B, 29C  
30, 30A, 30B, 30C  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
Operating and Storage  
Junction Temperature  
Range  
T , T  
65 to +150  
°C  
J
stg  
A
Y
WW  
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
62.5 °C/W  
4.167 °C/W  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. This rating based on testing with L = 20 mH, R = 100 W, V = 10 V, I =  
C
BE  
CC  
C
1.8 A, P.R.F = 10 Hz  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 Rev. 11  
TIP29B/D  
 

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