TIP29BBA

更新时间： 2024-01-24 12:46:05

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	143K
描述
1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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技术参数
数据手册

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TIP29BBA 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TIP29BBA 数据手册

TIP29, A, B, C (NPN),

TIP30, A, B, C (PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications. Compact TO−220 AB package.

http://onsemi.com

Features

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40, 60, 80, 100 VOLTS,

80 WATTS

• Pb−Free Packages are Available*

MAXIMUM RATINGS

29A

30A

29B

30B

29C

30C

Rating

Symbol

Unit

Collector − Emitter

CEO

100

Vdc

Voltage

MARKING

DIAGRAM

Collector − Base Voltage

Emitter − Base Voltage

100

Vdc

Adc

5.0

Collector Current

− Continuous

− Peak

1.0

3.0

TO−220AB

CASE 221A

STYLE 1

TIPxxxG

AYWW

Base Current

0.4

Adc

Total Power Dissipation

STYLE 1:

PIN 1. BASE

0.24

W/°C

@ T = 25°C

Derate above 25°C

2. COLLECTOR

3. EMITTER

4. COLLECTOR

Total Power Dissipation

@ T = 25°C

Derate above 25°C

2.0

0.016

W/°C

Unclamped Inductive

Load Energy (Note 1)

TIPxxx = Device Code:

29, 29A, 29B, 29C

30, 30A, 30B, 30C

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Operating and Storage

Junction Temperature

Range

T , T

–65 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

62.5 °C/W

4.167 °C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. This rating based on testing with L = 20 mH, R = 100 W, V = 10 V, I =

1.8 A, P.R.F = 10 Hz

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

October, 2011 − Rev. 11

TIP29B/D

12 3 4 5

中文翻译

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与TIP29BBA相关器件

型号	品牌	获取价格	描述	数据表
TIP29BBC	ONSEMI	获取价格	1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP29BBD	ONSEMI	获取价格	1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP29BBG	ONSEMI	获取价格	暂无描述
TIP29B-BP	MCC	获取价格	1.0 Amp Complementary Silicon Power Transistors
TIP29BBS	ONSEMI	获取价格	1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP29BBU	ONSEMI	获取价格	暂无描述
TIP29BBV	ONSEMI	获取价格	1A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP29BC	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP29BD1	MOTOROLA	获取价格	1A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP29B-DR6259	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

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