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TIP127

更新时间: 2024-11-23 08:48:43
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TGS 晶体晶体管达林顿晶体管
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描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP127 数据手册

  
TIGER ELECTRONIC CO.,LTD  
Product specification  
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS  
TIP122 / TIP127  
DESCRIPTION  
The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington  
configuration mounted in Jedec TO-220 plastic package. They are intented for use in power  
linear and switching applications.The complementary PNP types are TIP127 respectively.  
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value Unit  
Symbol  
VCBO  
100  
V
VCEO  
VEBO  
IC  
100  
5
V
V
5.0  
0.1  
65  
A
Base Current  
IB  
A
Total Dissipation at  
Ptot  
Tj  
W
oC  
150  
Max. Operating Junction Temperature  
Storage Temperature  
TO-220  
Tstg  
-55~150 oC  
O
ELECTRICAL CHARACTERISTICS  
( Ta = 25 C)  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Unit  
ICEO  
IEBO  
VCB=100V, IE=0  
VEB=5V, IC=0  
0.5  
2.0  
mA  
mA  
V
VCEO  
hFE(1)  
hFE(2)  
Collector-Emitter Sustaining Voltage  
DC Current Gain  
IC=30mA, IB=0  
VCE=3V, IC=0.5A  
VCE=3V, IC=3.0A  
100  
1000  
1000  
IC=3.0A,IB=12mA  
IC=5.0A,IB=20mA  
2
4
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(sat)  
VBE(sat)  
VCE=3V,IC=3.0A  
2.5  

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