Datasheet > TIP120_08

TIP120_08

更新时间： 2024-09-25 08:48:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
13页	614K
描述
Complementary power Darlington transistors

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中文翻译

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数据手册

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TIP120_08 数据手册

TIP120, TIP121, TIP122

TIP125, TIP126, TIP127

Complementary power Darlington transistors

Features

■ Low collector-emitter saturation voltage

■ Complementary NPN - PNP transistors

Applications

■ General purpose linear and switching

Description

TO-220

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration. The resulting

transistors show exceptional high gain

performance coupled with very low saturation

voltage.

Figure 1.

Internal schematic diagrams

NPN: R = 7 KΩ

PNP: R = 16 KΩ

R = 70 Ω

R = 60 Ω

Table 1.

Device summary

Order codes

Marking

Package

Packaging

TIP120

TIP121

TIP122

TIP125

TIP126

TIP127

TIP120

TIP121

TIP122

TIP125

TIP126

TIP127

TO-220

Tube

November 2008

Rev 4

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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TIP120-6261	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP120-6263	RENESAS	获取价格	8A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP120-6265	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP120A	DIOTEC	获取价格	Si-Epitaxial PlanarTransistors
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TIP120AF	ONSEMI	获取价格	TRANSISTOR 5 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pur