Datasheet > TIP102

TIP102

更新时间： 2024-01-22 16:59:49

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描述
Darlington Power Transistors (NPN)

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中文翻译

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数据手册

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TIP102 数据手册

Darlington Power Transistors (NPN)

TIP100/101/102

Darlington Power Transistors (NPN)

Features

• Designed for general-purpose amplifier and low speed

switching applications

• RoHS Compliant

TO-220

Mechanical Data

Case:

Terminals:

Weight:

TO-220, Plastic Package

Solderable per MIL-STD-202, Method 208

0.08 ounces, 2.24 grams

Maximum Ratings (T _Ambient=25ºC unless noted otherwise)

Symbol

VCBO

VCEO

VEBO

Description

Collector-Base Voltage

TIP100

TIP101

TIP102

100

Unit

Collector-Emitter Voltage

100

Emitter-Base Voltage

5.0

Collector Current Continuous

8.0

Collector Current Peak

ICM

Base Current

1.0

Power Dissipation upto TC=25°C

Power Dissipation upto TA=25°C

Power Dissipation Derate above TA=25°C

Thermal Resistance from Junction to Ambient in Free Air

Thermal Resistance from Junction to Case

Operating Junction and Storage Temperature Range

2.0

mW/° C

° C /W

° C

62.5

1.56

-65 to +150

RθJA

RθJC

TJ, TSTG

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com

Rev. A/AH 2008-06-13

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中文翻译

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与TIP102相关器件

型号	品牌	获取价格	描述	数据表
TIP102_03	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP102_15	UTC	获取价格	NPN EPITAXIAL TRANSISTOR
TIP102-6200	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP102-6203	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP102-6226	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP102-6255	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP102-6258	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP102-6261	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP102-6263	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP102-6264	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB