是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-CDFM-F2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.55 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 15 V |
最大漏极电流 (Abs) (ID): | 5.2 A | 最大漏极电流 (ID): | 5.2 A |
FET 技术: | JUNCTION | 最高频带: | KU BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 30 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIM1011-5 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | |
TIM1011-5L | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1011-8 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power | |
TIM1011-8L | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1011-8UL | TOSHIBA |
获取价格 |
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET | |
TIM105K025P0X | CDE |
获取价格 |
Tantalum Capacitor, Polarized, Tantalum (dry/solid), 25V, 10% +Tol, 10% -Tol, 1uF, Through | |
TIM105K035P0X | CDE |
获取价格 |
Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, 1uF, Through | |
TIM105K035P0X | VISHAY |
获取价格 |
Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, 1uF, Through | |
TIM105K050P0W | CDE |
获取价格 |
Tantalum Capacitor, Polarized, Tantalum (dry/solid), 50V, 10% +Tol, 10% -Tol, 1uF, Through | |
TIM105K050P0W | VISHAY |
获取价格 |
Tantalum Capacitor, Polarized, Tantalum, 50V, 10% +Tol, 10% -Tol, 1uF, 3423 |