THS4500IDGNR

更新时间： 2024-02-16 10:57:13

品牌	Logo	应用领域
德州仪器 - TI		放大器光电二极管运算放大器放大器电路
页数	文件大小	规格书
37页	582K
描述
具有断电功能的 15V 高速全差分放大器 \| DGN \| 8 \| -40 to 85

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THS4500IDGNR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOIC
包装说明：	MSOP-8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.33.00.01	风险等级：	5.37
放大器类型：	OPERATIONAL AMPLIFIER	架构：	VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：	6.6 µA	标称带宽 (3dB)：	30 MHz
25C 时的最大偏置电流 (IIB)：	6.6 µA	最小共模抑制比：	74 dB
标称共模抑制比：	80 dB	频率补偿：	YES
最大输入失调电流 (IIO)：	2 µA	最大输入失调电压：	7000 µV
JESD-30 代码：	S-PDSO-G8	JESD-609代码：	e4
长度：	3 mm	低-偏置：	NO
低-失调：	NO	微功率：	NO
湿度敏感等级：	1	负供电电压上限：	-8.25 V
标称负供电电压 (Vsup)：	-15 V	功能数量：	1
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	HTSSOP	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	包装方法：	TR
峰值回流温度（摄氏度）：	260	功率：	NO
可编程功率：	NO	座面最大高度：	1.1 mm
标称压摆率：	2800 V/us	子类别：	Operational Amplifier
最大压摆率：	28 mA	供电电压上限：	8.25 V
标称供电电压 (Vsup)：	15 V	表面贴装：	YES
温度等级：	MILITARY	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
标称均一增益带宽：	300000 kHz	最小电压增益：	282
宽带：	YES	宽度：	3 mm
Base Number Matches：	1

THS4500IDGNR 数据手册

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www.ti.com

SLOS350D − APRIL 2002 − REVISED JANUARY 2004

This integrated circuit can be damaged by ESD. Texas

Instruments recommends that all integrated circuits be

handledwith appropriate precautions. Failure to observe

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted

(1)

proper handling and installation procedures can cause damage.

UNIT

Supply voltage, V

16.5 V

ESD damage can range from subtle performance degradation to

complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

Input voltage, V

(2)

Output current, I

150 mA

4 V

Differential input voltage, V

PACKAGE DISSIPATION RATINGS

Continuous power dissipation

See Dissipation Rating Table

(2)

POWER RATING

(1)

(3)

Maximum junction temperature, T

150°C

(°C/W) (°C/W)

PACKAGE

≤ 25°C = 85°C

Maximum junction temperature, continuous

operation, long term reliability T

125°C

(4)

D (8 pin)

38.3

4.7

97.5

58.4

260

1.02 W

1.71 W

410 mW

685 mW

154 mW

C suffix

0°C to 70°C

−40°C to 85°C

−65°C to 150°C

DGN (8 pin)

DGK (8 pin)

Operating free-air temperature

range, T

I suffix

54.2

385 mW

(1)

(2)

Storage temperature range, T

stg

This data was taken using the JEDEC standard High-K test PCB.

Power rating is determined with a junction temperature of 125°C.

This is the point where distortion starts to substantially increase.

Thermalmanagement of the final PCB should strive to keep the

junctiontemperature at or below 125°C for best performance and

long term reliability.

Lead temperature

1,6 mm (1/16 inch) from case for 10 seconds

300°C

HBM

4000 V

2000 V

100 V

CDM

ESD ratings:

(1)

Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods

may degrade device reliability. These are stress ratings only, and

functional operation of the device at these or any other conditions

beyond those specified is not implied.

The THS4500/1 may incorporate a PowerPAD on the underside

of the chip. This acts as a heat sink and must be connected to a

thermally dissipative plane for proper power dissipation. Failure

to do so may result in exceeding the maximum junction

temperature which could permanently damage the device. See TI

technical briefs SLMA002 and SLMA004 for more information

about utilizing the PowerPAD thermally enhanced package.

The absolute maximum temperature under any condition is

limited by the constraints of the silicon process.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM MAX UNIT

Dual supply

7.5

Supply voltage

Single supply

4.5

(2)

Operating free-

air temperature,

C suffix

I suffix

°C

−40

(3)

(4)

The maximum junction temperature for continuous operation is

limited by package constraints. Operation above this temperature

may result in reduced reliability and/or lifetime of the device.

PACKAGE/ORDERING INFORMATION

ORDERABLE PACKAGE AND NUMBER

(1)

PLASTIC MSOP

PowerPad

PLASTIC

SMALL OUTLINE

(D)

(1)

PLASTIC MSOP

TEMPERATURE

(DGN)

SYMBOL

BFB

(DGK)

SYMBOL

ATV

THS4500CD

THS4501CD

THS4500ID

THS4501ID

THS4500CDGN

THS4501CDGN

THS4500IDGN

THS4501IDGN

THS4500CDGK

THS4501CDGK

THS4500IDGK

THS4501IDGK

0°C to 70°C

BFD

ATW

BFC

ASV

−40°C to 85°C

BFE

ASW

(1)

All packages are available taped and reeled. The R suffix standard quantity is 2500. The T suffix standard quantity is 250 (e.g., THS4501DT).

123 4 5 6 7...37

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与THS4500IDGNR相关器件

型号	品牌	描述	获取价格	数据表
THS4500IDGNT	TI	OP-AMP, 1000uV OFFSET-MAX, 300MHz BAND WIDTH, PDSO8, PLASTIC, MSOP-8	获取价格
THS4500IDR	TI	High-Speed Fully Differential Amplifier, +/-5 V 8-SOIC -40 to 85	获取价格
THS4500IDRB	TI	OP-AMP, 1000uV OFFSET-MAX, 300MHz BAND WIDTH, PDSO8, PLASTIC, SO-8	获取价格
THS4500IDT	TI	OP-AMP, 1000uV OFFSET-MAX, 300MHz BAND WIDTH, PDSO8, PLASTIC, MSOP-8	获取价格
THS4500MDGNEP	TI	增强型产品宽带低失真全差分放大器 \| DGN \| 8 \| -55 to 125	获取价格
THS4500MDGNREP	TI	增强型产品宽带低失真全差分放大器 \| DGN \| 8 \| -55 to 125	获取价格

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