THS3001, THS3002
420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS
SLOS217A – JULY 1998 – REVISED JUNE 1999
THS3001
THS3002
D AND DGN PACKAGE
(TOP VIEW)
High Speed
†
D AND DGN PACKAGE
– 420 MHz Bandwidth (G = 1, –3 dB)
– 6500 V/µs Slew Rate
– 40-ns Settling Time (0.1%)
(TOP VIEW)
NULL
IN–
NULL
1OUT
1IN–
1IN+
V
CC+
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
V
2OUT
2IN–
2IN+
High Output Drive, I = 100 mA
O
CC+
IN+
OUT
NC
Excellent Video Performance
– 115 MHz Bandwidth (0.1 dB, G = 2)
– 0.01% Differential Gain
V
–V
CC
CC–
NC – No internal connection
– 0.02° Differential Phase
†
The THS3001 implemented in the DGN package is in the
product preview stage of development. Contact your local TI
sales office for availability.
Low 3-mV (max) Input Offset Voltage
Very Low Distortion
– THD = –96 dBc at f = 1 MHz
– THD = –80 dBc at f = 10 MHz
OUTPUT AMPLITUDE
vs
FREQUENCY
Wide Range of Power Supplies
8
– V
= ±4.5 V to ±16 V
CC
V
R
= ±15 V
= 680 Ω
CC
F
Evaluation Module Available
7
6
description
5
The THS300x is a high-speed current-feedback
operational amplifier, ideal for communication,
imaging, and high-quality video applications. This
device offers a very fast 6500-V/µs slew rate, a
420-MHz bandwidth, and 40-ns settling time for
large-signal applications requiring excellent tran-
sient response. In addition, the THS300x
operates with a very low distortion of –96 dBc,
making it well suited for applications such as
wireless communication basestations or ultrafast
ADC or DAC buffers.
V
R
= ±5 V
= 750 Ω
CC
F
4
3
2
1
G = 2
= 150 Ω
0
R
L
V = 200 mV RMS
I
–1
100k
1M
10M
f – Frequency – Hz
100M
1G
HIGH-SPEED AMPLIFIER FAMILY
THD
SUPPLY
VOLTAGE
t
s
ARCHITECTURE
BW
SR
DIFF.
GAIN
DIFF.
PHASE
V
n
(nV/√Hz)
f = 1 MHz 0.1%
(dB)
DEVICE
(MHz)
(V/µs)
(ns)
VFB
CFB
5 V ±5 V ±15 V
THS3001/02
THS4001
•
•
•
•
•
•
•
•
•
•
•
420
270
290
100
180
6500
400
310
100
400
–96
–72
–80
–72
–72
40
40
37
60
40
0.01%
0.04%
0.006%
0.02%
0.02%
0.02°
0.15°
0.01°
0.03°
0.02°
1.6
12.5
7.5
•
•
•
•
•
THS4011/12
THS4031/32
THS4061/62
1.6
14.5
CAUTION: The THS300x provides ESD protection circuitry. However, permanent damage can still occur if this device is subjected
to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance degradation or loss
of functionality.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265