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TH74KB27AVWKRNGS PDF预览

TH74KB27AVWKRNGS

更新时间: 2023-02-26 14:14:11
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
20页 1122K
描述
CCD Sensor, 2.50V, Square, Surface Mount, CERAMIC, J LEAD PACKAGE-84

TH74KB27AVWKRNGS 数据手册

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TH7426A/27A  
- if RE is activated or always at high level (Timing Diagram - Figure 2), each stored charge is transferred to the rea-  
dout capacitance; this continuous readout mode is recommended for long integration time.  
Qs conversion into voltage is supported by the readout stage capacitance, linked to a low output impedance ampli-  
fier. This capacitance is reset at V  
bias, before each pixel readout operation (high level φ ).  
DR  
R
Due to the “Vidicon” read out mode, Qb level needs adjustment so as to provide enough carriers to sustain photocurrent  
and dark current during the integration time. Pixel antiblooming is also resulting from “Vidicon mode” since photodiodes  
cannot consume more electrons than Qb.  
Antismearing (frame to frame antiblooming) efficiency depends on the photodiode reset conditions, reverse bias recovering  
need a minimum Qb condition such as :  
Qb>Clat .V  
D
where : - Clat is the individual lateral input node capacitance, Clat ~1.5 pF (including photodiode, bonding pads...)  
where : - V is the photodiode bias : V = V - 0.78V - 8.7  
D
D
N
G 1  
7/20  

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