Datasheet > TGT5350R

TGT5350R

更新时间： 2024-04-09 18:59:14

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	372K
描述
50V,2A,General Purpose PNP Bipolar Transistor

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TGT5350R 数据手册

PNP Silicon Epitaxial Planar Transistor

TGT5350R

Electrical Characteristics (@ T_A= 25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= -10μA, I_E= 0

-50

I_C= -1mA, I_B= 0

-50

I_E= -10μA, I_C= 0

-5

V_CB= -50V, I_E= 0

-0.1

μA

Emitter Cut-off Current

I_EBO

V_EB= -5V, I_C= 0

V_CE= -2V, I_C= -100mA

V_CE= -2V, I_C= -500mA

V_CE= -2V, I_C= -1A

V_CE= -2V, I_C= -2A

I_C= -500mA, I_B= -50mA

I_C= -1A, I_B= -50mA

I_C= -2A, I_B= -100mA

I_C= -2A, I_B= -200mA

I_C= -2A, I_B= -100mA

I_C= -1A, V_CE= -2V

200

DC Current Gain

h_FE

200

130

-0.09

-0.18

-0.32

-0.30

135

-1.1

Collector-emitter Saturation Voltage

V_CE(sat)

Equivalent On-Resistance

Base-emitter Saturation Voltage

Base-emitter Voltage

R_CE(sat)

V_BE(sat)

V_BE(on)

mΩ

-1.2

V_CE= -5V, I_C= -100mA

f = 100MHz

Transition Frequency

f_T

100

MHz

V_CB= -10V, I_E= I_e= 0

f = 1MHz

Output Capacitance

C_ob

Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm²

STM0431A: January 2022

www.gmesemi.com

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