Datasheet > TGT5360

TGT5360

更新时间： 2025-08-27 17:01:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	329K
描述
60V,2A,General Purpose PNP Bipolar Transistor

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数据手册

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TGT5360 数据手册

PNP Silicon Epitaxial Planar Transistor

TGT5360

Features



Low collector-emitter saturation voltage V_CE(sat)

and corresponding low R_CE(sat)

High collector current capability

High collector current gain



Improved efficiency due to reduced heat generation

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23

Ordering Information

Part Number

Package

SOT-23

Shipping Quantity

Marking Code

TGT5360

3000 pcs / Tape & Reel

T5360

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

-80

-60

-7

-2

I_CM

-4

Thermal Characteristics

Parameter

Power Dissipation ( T_A= 25°C ) ^*1

Thermal Resistance Junction-to-Air ^*1

Junction Temperature Range

Symbol

P_D

Value

0.46

Unit

R_θJA

T_J

270

°C/W

°C

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: FR−4 @ 100 mm², 1 oz. copper traces

STM0473A: October 2020

www.gmesemi.com

12 3 4

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