Datasheet > TGT4350E

TGT4350E

更新时间： 2024-04-09 19:02:37

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	435K
描述
50V,3A,Medium Power NPN Bipolar Transistor

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TGT4350E 数据手册

NPN Silicon Epitaxial Planar Transistor

TGT4350E

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Test Condition

Min. Typ. Max. Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

I_C= 10μA, I_E= 0

μA

I_C= 1mA, I_B= 0

I_E= 10μA, I_C= 0

V_CB= 50V, I_E= 0, T_J= 25°C

V_CB= 50V, I_E= 0, T_J= 150°C

V_EB= 5V, I_C= 0

0.1

Collector Cut-off Current

Emitter Cut-off Current

I_CBO

I_EBO

V_CE= 2V, I_C= 100mA

V_CE= 2V, I_C= 500mA

V_CE= 2V, I_C= 1A

300

DC Current Gain

h_FE

300

700

V_CE= 2V, I_C= 2A

200

V_CE= 2V, I_C= 3A

100

I_C= 500mA, I_B= 50mA

I_C= 1A, I_B= 50mA

I_C= 2A, I_B= 100mA

I_C= 2A, I_B= 200mA

I_C= 3A, I_B= 300mA

I_C= 2A, I_B= 100mA

I_C= 3A, I_B= 300mA

I_C= 1A, V_CE= 2V

0.08

0.16

0.28

0.26

0.37

1.1

1.2

Collector-emitter Saturation Voltage

Base-emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

Base-emitter Voltage

Transition Frequency

V_BE(on)

f_T

V_CE= 5V, I_C= 100mA

f = 100MHz

100

MHz

V_CB= 10V, I_E= I_e= 0

f = 1MHz

Output Capacitance

C_ob

STM5025A: February 2022

www.gmesemi.com

123 4

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