Datasheet > TGT5350R

TGT5350R

更新时间： 2024-04-09 18:59:14

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	372K
描述
50V,2A,General Purpose PNP Bipolar Transistor

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TGT5350R 数据手册

PNP Silicon Epitaxial Planar Transistor

TGT5350R

Features



Low Collector-Emitter saturation voltage V_CE(sat)

and corresponding low R_CE(sat)

High collector current capability

High collector current gain



Improved efficiency due to reduced heat generation

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

TGT5350R

4000 pcs / Tape & Reel

T5350

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Equivalent On-Resistance

Symbol

V_CBO

Value

Unit

-50

-5

V_CEO

V_EBO

I_C

-2

R_CE(sat)

135

mΩ

Thermal Characteristics

Parameter

Power Dissipation ^*1

Symbol

P_D

Value

1.15

Unit

Thermal Resistance Junction-to-Air

Junction Temperature Range

Storage Temperature Range

R_θJA

T_J

108

°C /W

°C

-55 ~ +150

T_STG

°C

STM0431A: January 2022

www.gmesemi.com

12 3 4

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