Datasheet > TGT4350R

TGT4350R

更新时间： 2024-04-09 18:59:14

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	444K
描述
50V,3A,General Purpose NPN Bipolar Transistor

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TGT4350R 数据手册

NPN Silicon Epitaxial Planar Transistor

TGT4350R

Features



Low Collector-Emitter saturation voltage V_CE(sat)

and corresponding low R_CE(sat)

High collector current capability

High collector current gain



Improved efficiency due to reduced heat generation

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

TGT4350R

4000 pcs / Tape & Reel

T4350

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Thermal Characteristics

Parameter

Power Dissipation ^*1

Symbol

P_D

Value

1.15

Unit

Thermal Resistance Junction-to-Air

Junction Temperature Range

Storage Temperature Range

R_θJA

T_J

227

°C /W

°C

-55 ~ +150

T_STG

°C

STM0612A: June 2020

www.gmesemi.com

12 3 4

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