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TGL41-200C PDF预览

TGL41-200C

更新时间： 2024-11-28 23:03:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管IOT局域网
页数 文件大小 规格书
4页 191K
描述
500 Watt Transient Voltage Suppressor

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中文翻译

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TGL41-200C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：O-PELF-R2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.81Is Samacsys：N
最大击穿电压：220 V最小击穿电压：180 V
外壳连接：ISOLATED最大钳位电压：287 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-213AB
JESD-30 代码：O-PELF-R2JESD-609代码：e0
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：3 W认证状态：Not Qualified
最大重复峰值反向电压：162 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

TGL41-200C 数据手册

 浏览型号TGL41-200C的Datasheet PDF文件第2页浏览型号TGL41-200C的Datasheet PDF文件第3页浏览型号TGL41-200C的Datasheet PDF文件第4页 
TGL41-6.8 thru TGL41-200CA  
500 Watt Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
APPEARANCE  
DESCRIPTION  
This series of 500 W Transient Voltage Suppressors (TVSs) provides the  
highest level of Peak Pulse Power (PPP) in the industry for the DO-213AB  
size MELF package. These PPP levels offer protection from switching  
transients, induced RF, secondary lightning, as well as ESD or EFT where  
these devices are also compliant to IEC61000-4-2 and IEC61000-4-4. In  
addition to unidirectional TVS configurations, this series also offers  
bidirectional options with C or CA suffix. Its configuration in a MELF  
package prevents lead damage to terminals and also reduces inductive  
parasitics for minimal transient voltage overshoots.  
DO-213AB  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
APPLICATIONS / BENEFITS  
FEATURES  
·
·
Economical series for 500 Watt Surface Mount  
transient voltage suppressor.  
·
·
For Surface Mount Applications  
Protection from switching transients, induced  
RF, secondary lightning, as well as ESD, and  
EFT per IEC 61000-4-2 and IEC 6100-4-4  
Available in Both Unidirectional and Bidirectional  
Construction. Bidirectional has a C or CA suffix.  
·
·
·
6.8 to 200 Volts Available.  
·
·
Very low inductive parasitics with minimal  
Ldi/dt voltage overshoots for fast-rise-time  
transients  
500 Watts Peak Power Dissipation.  
Fast Response Time: Subnanosecond Response  
(Unipolar) or 5.0 ns (Bipolar).  
Robust package for pick-and-place handling  
·
Plastic package has flame retardant epoxy meeting  
UL94V-0  
MAXIMUM RATINGS @ 25oC*  
MECHANICAL AND PACKAGING  
·
Peak Pulse Power Dissipation (PPP) - 500 W (Note  
1 & 5).  
·
·
Molded epoxy package meets UL94V-0  
End-Cap terminals solderable per MIL-STD-750,  
Method 2026 (max 260oC for 10 seconds.  
·
·
Peak Forward Surge Current (IFSM) - 40 A (Note 3)  
·
Polarity is indicated by cathode band. Bidirectional  
devices have no polarity band.  
Peak Pulse Current (IPP) at 10/1000 ms waveform -  
see Table 1 (Note 1)  
·
·
Body marked with P/N without TGL41 prefix.  
Weight: 0.06 grams (approximate)  
·
·
Steady-State Power Dissipation, P(AV) - 3.0W (Note  
2, 4)  
Operating and Storage temperatures, TOP, TSTG  
(-55oC to +150oC)  
–
·
Tape and Reel packaging per EIA-481-2 with 12  
mm tape with 5000 per 13 inch reel.  
·
Thermal Resistance junction to end cap (R JEC) –  
?
15oC/W  
* Unless otherwise specified.  
NOTES:  
1. Non-repetitive current pulse, per Figure 3 and derated above TA = 25oC per Figure 2.  
2
2. Mounted on 4.0 mm copper pads to each terminal. (See Figure 3)  
3. 8.3 ms single half-sine wave duty cycle = 4 pulses per minute max. Peak forward voltage at 40 A is 3.5 volts (unipolar only)  
4. Derate linearly above 100oC to zero at 150oC for dc steady-state power. Also see Figure 2 for transient derating.  
5. Peak pulse current waveform is 10/1000 ms, with maximum duty cycle of 0.01%. (See Figure 4)  
Copyright ã 2003  
01-29-2003 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

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TGL41-200C 替代型号

型号 品牌 替代类型 描述 数据表
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 		500 Watt Transient Voltage Suppressor
TGL41-200CA SEMIKRON

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 		Trans Voltage Suppressor Diode, 400W, 171V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-200CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 171V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-200CATGL41 SEMIKRON

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 		Trans Voltage Suppressor Diode, 400W, 171V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-200CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-200CR7 DIOTEC

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 		Transient Suppressor,
TGL41-200CTGL41 SEMIKRON

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 		Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-200E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TGL41-200-E3/96 VISHAY

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 		Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TGL41-200HE3/46 VISHAY

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 		Trans Voltage Suppressor Diode, 200W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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