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TGL41-180A26 PDF预览

TGL41-180A26

更新时间： 2024-11-29 18:43:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 69K
描述
Trans Voltage Suppressor Diode, 400W, 154V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN

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TGL41-180A26 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：DO-213AB包装说明：O-PELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.52最大击穿电压：189 V
最小击穿电压：171 V击穿电压标称值：180 V
外壳连接：ISOLATED最大钳位电压：246 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-213AB
JESD-30 代码：O-PELF-R2JESD-609代码：e0
最大非重复峰值反向功率耗散：400 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：1 W
认证状态：Not Qualified最大重复峰值反向电压：154 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
Base Number Matches：1

TGL41-180A26 数据手册

 浏览型号TGL41-180A26的Datasheet PDF文件第2页浏览型号TGL41-180A26的Datasheet PDF文件第3页浏览型号TGL41-180A26的Datasheet PDF文件第4页 
TGL41-6.8 thru TGL41-200A  
Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
Breakdown Voltage 6.8 to 200V  
Peak Pulse Power 400W  
DO-213AB (GL41)  
SOLDERABLE ENDS  
+ 0  
D2 = D1  
- 0.008 (0.20)  
1st BAND  
Mounting Pad Layout  
D1=  
0.157 (4.00)  
MAX  
D2  
0.105  
0.095  
(2.67)  
(2.41)  
0.049 (1.25) MIN  
0.118 (3.00) MIN  
0.022 (0.56)  
0.018 (0.46)  
0.022 (0.56)  
0.018 (0.46)  
0.205 (5.2)  
0.185(4.7)  
0.256 (6.50)  
REF  
Dimensions in inches  
and (millimeters)  
1st band denotes type and positive end (cathode)  
Mechanical Data  
Features  
Case: JEDEC DO-213AB molded plastic body over  
• Plastic package has Underwriters Laboratory  
passivated junction  
Flammability Classificaion 94V-0  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Polarity: Blue bands denotes the cathode which is  
positive with respect to the anode under normal TVS  
operation  
Mounting Position: Any  
Weight: 0.166 gram, 0.0046 ounce  
Packaging codes/options:  
• For surface mounted applications  
• Glass passivated junction  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
• 400W peak pulse capability with a 10/1000µs waveform,  
repetition rate (duty cycle): 0.01% (200W above 91V)  
• For devices with V(BR)≥10V, ID are typically less  
than 1.0µA  
• High temperature soldering guaranteed: 250°C/10  
26/5K per 13” Reel (12mm tape), 60K/box  
46/1.5K per 7” Reel (12mm tape), 30K/box  
seconds at terminals  
• Available in unidirectional only  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with a  
PPPM  
Minimum 400  
W
10/1000µs waveform(1)(Fig. 1)  
Steady state power dissipation at TL = 75°C(2)  
PM(AV)  
IPPM  
1.0  
W
A
Peak pulse current with a 10/1000µs waveform(1)(Fig. 3)  
See Next Table  
Peak forward surge current, 8.3 ms single half sine-wave  
unidirectional only(3)  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25A for  
unidirectional only  
VF  
3.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2. Rating is 200W above 91V.  
(2) Mounted on copper pads to each terminal of 0.31 in2 (8.0 mm2) per Fig. 5  
(3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum  
2/12/01  
1234

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 		Trans Voltage Suppressor Diode, 200W, 154V V(RWM), Unidirectional, 1 Element, Silicon, DO-
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 		Trans Voltage Suppressor Diode, 200W, 154V V(RWM), Unidirectional, 1 Element, Silicon, DO-
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 		Trans Voltage Suppressor Diode, 200W, 154V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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