TGL41-170

更新时间： 2024-11-27 22:42:19

品牌	Logo	应用领域
威世 - VISHAY		二极管 IOT 局域网
页数	文件大小	规格书
4页	57K
描述
SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TGL41-170 数据手册

TGL41-6.8 THRU TGL41-200A

SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR

Breakdown Voltage - 6.8 to 200 Volts

Peak Pulse Power - 400 Watts

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

DO-213AB

♦ For surface mounted applications

♦ Glass passivated junction

SOLDERABLE ENDS

♦ Excellent clamping capability

1st BAND

♦ Low incremental surge resistance

♦ Fast response time typically less than 1.0ps from

D1=

0 Volts to V

(BR)

0.105

0.095

(2.67)

(2.41)

♦ 400W peak pulse capability with a 10/1000µs waveform,

repetition rate (duty cycle): 0.01%

♦ For devices with V

than 1.0µA

♦ High temperature soldering guaranteed:

≥10V, I are typically less

(BR)

0.022 (0.56)

0.018 (0.46)

+ 0

D2 = D1

- 0.008 (0.20)

0.205 (5.2)

0.185(4.7)

250°C/10 seconds at terminals

1st band denotes type and positive end (cathode)

MECHANICAL DATA

Case: JEDEC DO-213AB molded plastic body over

passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Dimensions in inches and (millimeters)

Polarity: Blue bands denotes the cathode which is positive

with respect to the anode under normal TVS operation

Mounting Position: Any

Available in uni-directional only

Weight: 0.116 gram, 0.0046 ounce

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATINGS

SYMBOL

P_PPM

VALUE

Minimum 400

1.0

UNITS

Watts

Watt

Peak pulse power dissipation with a

10/1000µs waveform _{(NOTE 1, FIG. 1)}

Steady state power dissipation at T_L=75°C _{(NOTE 2)}

P_M(AV)

I_PPM

Peak pulse current with a 10/1000µs waveform

(NOTE 1, FIG. 3)

Amps

SEE TABLE 1

Peak forward surge current, 8.3ms single half

sine-wave superimposed on rated load for unidirectional only

(JEDEC Method) _{(NOTE 3)}

I_FSM

40.0

Amps

Maximum instantaneous forward voltage at 25A

for unidirectional only

V_F

3.5

Volts

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

NOTES:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A=25°C per Fig. 2

(2) Mounted on copper pads to each terminal of 0.31 in (8.0 mm ) per Fig. 5

(3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle=4 pulses per minute maximum

1/20/99

12 3 4

中文翻译

下载PDF

与TGL41-170相关器件

型号	品牌	获取价格	描述	数据表
TGL41-170/26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 200W, 138V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TGL41-170/46	VISHAY	获取价格	Trans Voltage Suppressor Diode, 138V V(RWM), Unidirectional,
TGL41-170A	DIOTEC	获取价格	Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
TGL41-170A	MICROSEMI	获取价格	500 Watt Transient Voltage Suppressor
TGL41-170A	TAITRON	获取价格	400W Surface Mount Transient Voltage Suppressor
TGL41-170A	SEMIKRON	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor diodes
TGL41-170A	VISHAY	获取价格	SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SU
TGL41-170A/26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 145V V(RWM), Unidirectional,
TGL41-170A26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TGL41-170A-26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 200W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与TGL41-170相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

TGL41-170

TGL41-170 数据手册

与TGL41-170相关器件

与TGL41-170相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TGL41-170

TGL41-170 数据手册

与TGL41-170相关器件

与TGL41-170相关文章

您还可以找

您在本页遇到什么问题？