Datasheet > TEMT3700_08

TEMT3700_08

更新时间： 2024-02-14 11:18:42

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
6页	137K
描述
Silicon NPN Phototransistor, RoHS Compliant

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TEMT3700_08 数据手册

TEMT3700

Vishay Semiconductors

Silicon NPN Phototransistor, RoHS Compliant

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = 60°

• Package notch indicates collector

• Package matched with IR emitter series VSML3710

• Floor life: 1 year, MSL 2, acc. J-STD-020

94 8553

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION

APPLICATIONS

• Photo interrupters

• Miniature switches

• Counters

TEMT3700 is a high speed silicon NPN epitaxial planar

phototransistor in a miniature PLCC-2 package for surface

mounting on printed boards. The device is sensitive to visible

and near infrared radiation.

• Encoders

• Position sensors

• Ligth sensors

PRODUCT SUMMARY

COMPONENT

I_ca(mA)

ϕ (deg)

λ_0.1(nm)

TEMT3700

0.5

450 to 1080

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

TEMT3700-GS08

TEMT3700-GS18

PACKAGING

Tape and reel

REMARKS

PACKAGE FORM

PLCC-2

MOQ: 7500 pcs, 1500 pcs/reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Collector emitter voltage

Emitter collector voltage

Collector current

V_CEO

V_ECO

I_C

°C

Collector peak current

t_p/T ≤ 0.1, t_p≤ 10 µs

I_CM

100

Power dissipation

P_V

100

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

T_sd

- 40 to + 100

260

°C

Acc. reflow solder profile fig. 10

°C

Thermal resistance junction/ambient

Note

Soldered on PCB with pad dimensions: 4 mm x 4 mm

R_thJA

400

K/W

_amb= 25 °C, unless otherwise specified

Document Number: 81555

Rev. 1.7, 10-Oct-08

For technical questions, contact: detectortechsupport@vishay.com

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与TEMT3700_08相关器件

型号	品牌	获取价格	描述	数据表
TEMT3700F	VISHAY	获取价格	Photo Transistor, 940nm, 0.05A I(C)
TEMT3700F-GS08	VISHAY	获取价格	Photo Transistor, 940nm, 0.05A I(C)
TEMT3700-GS08	VISHAY	获取价格	Silicon NPN Phototransistor, RoHS Compliant
TEMT3700-GS18	VISHAY	获取价格	Silicon NPN Phototransistor, RoHS Compliant
TEMT3703	VISHAY	获取价格	Photo Transistor, 830nm, 0.05A I(C),
TEMT3704	VISHAY	获取价格	Optoelectronic Device,
TEMT3705	VISHAY	获取价格	Photo Transistor, 830nm, 0.05A I(C),
TEMT4700	VISHAY	获取价格	Silicon NPN Phototransistor
TEMT4700-GS08	VISHAY	获取价格	Photo Transistor, 830nm, 0.05A I(C)
TEMT6000	VISHAY	获取价格	Ambient Light Sensor