Datasheet > TEMT4700-GS08

TEMT4700-GS08

更新时间： 2024-01-28 22:29:54

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	105K
描述
Photo Transistor, 830nm, 0.05A I(C)

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中文翻译

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技术参数
数据手册

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TEMT4700-GS08 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.26
最大暗电源：	200 nA	JESD-609代码：	e3
安装特点：	SURFACE MOUNT	最大通态电流：	0.05 A
最高工作温度：	100 °C	最低工作温度：	-55 °C
峰值波长：	830 nm	最大功率耗散：	0.1 W
子类别：	Photo Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	Base Number Matches：	1

TEMT4700-GS08 数据手册

TEMT4700

Vishay Semiconductors

Silicon NPN Phototransistor

Description

TEMT4700 is a high speed silicon NPN epitaxial

planar phototransistor in

miniature PLCC-3

package for surface mounting on printed boards. Due

to its waterclear epoxy the device is sensitive to

visible and near infrared radiation.

A base terminal is available to enable biasing and

sensitivity control.

94 8554

Features

Applications

• Extra wide viewing angle: ϕ = 60ꢀ

• Miniature switches

• PLCC-3 SMD package

• Counters and sorters

• Interrupters

• Base terminal connected

• Package notch at collector contact

• Tape and card readers

• Encoders

• Fast response times

• Suitable for visible and near infrared radiation

• Matches with IR emitter TSMS3700

• Lead (Pb)-free component

• Position sensors

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Absolute Maximum Ratings

= 25 ꢀC, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_CEO

Value

Unit

Collector emitter voltage

Emitter collector voltage

Collector current

V_ECO

I_C

ꢀC

t_p/T ≤ 0.1, t_p≤ 10 µs

T_amb≤ 55 ꢀC

I_CM

P_V

Collector peak current

Power dissipation

100

T_j

Junction temperature

Storage temperature range

Soldering temperature

100

T_stg

T_sd

- 55 to + 100

260

ꢀC

t ≤ 3 s

ꢀC

Thermal resistance

junction/ambient

R_thJA

450

K/W

For technical support, please contact: detectortechsupport@vishay.com

Document Number 81556

Rev. 1.5, 09-Jun-08

www.vishay.com

12 3 4 5 6

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