Datasheet > TEMT3700F

TEMT3700F

更新时间： 2024-02-12 16:09:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	222K
描述
Photo Transistor, 940nm, 0.05A I(C)

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中文翻译

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技术参数
数据手册

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TEMT3700F 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.17
最大暗电源：	200 nA	安装特点：	SURFACE MOUNT
最大通态电流：	0.05 A	最高工作温度：	100 °C
最低工作温度：	-40 °C	峰值波长：	940 nm
最大功率耗散：	0.1 W	子类别：	Photo Transistors
表面贴装：	YES	Base Number Matches：	1

TEMT3700F 数据手册

TEMT3700F

Vishay Semiconductors

VISHAY

Silicon NPN Phototransistor

Description

TEMT3700F is a high speed silicon NPN epitaxial pla-

nar phototransistor in a miniature PLCC-2 package

with integrated IR band pass filter (950 nm).

Features

• High sensitivity

• IR Filter (950 nm band pass)

• Suitable for near infrared radiation

• Extra wide viewing angle ϕ = 60 °

• Fast response times

• PLCC-2 SMD package

Applications

Touch sensors

Transmissive sensors

Reflective sensors

• Package notch = collector

• No base terminal

• Matched to IR emitter TSMS3700 and TSML3710

• Lead-free device

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

amb

Test condition

Symbol

Value

Unit

Collector Emitter Voltage

Emitter Collector Voltage

Collector current

CEO

ECO

°C

Collector peak current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

Soldering Temperature

t /T ≤ 0.1, t ≤ 10 µs

100

≤ 55 °C

100

amb

tot

100

- 40 to + 100

260

°C

stg

t ≤ 3 s

°C

Thermal Resistance Junction/

Ambient

450

K/W

thJA

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

= 1 mA

Symbol

Min

Typ.

Max

200

Unit

Collector Emitter Breakdown

(BR)CEO

Voltage

Collector-emitter dark current

= 20 V, E = 0

CEO

Collector-emitter capacitance

= 5 V, f = 1 MHz, E=0

CEO

Document Number 81582

Rev. 1.1, 09-Jun-04

www.vishay.com

12 3 4 5 6 7

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