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TD142N14KOF

更新时间: 2024-11-16 15:54:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网
页数 文件大小 规格书
13页 405K
描述
Silicon Controlled Rectifier, 230A I(T)RMS, 142000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5

TD142N14KOF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:MODULE包装说明:FLANGE MOUNT, R-XUFM-X5
针数:5Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.75
Base Number Matches:1

TD142N14KOF 数据手册

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Datenblatt / Data sheet  
N
Netz-Thyristor-Modul  
TT142N  
Phase Control Thyristor Module  
TT142N  
TD142N  
DT142N  
TT142N...-K  
TD142N...-A  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
repetitive peak forward off-state and reverse voltages  
1200  
1200  
1300  
1400 V  
1600 V  
VDRM,VRRM  
1400 V  
1600 V  
Vorwärts-Stoßspitzensperrspannung  
non-repetitive peak forward off-state voltage  
Tvj = -40°C... Tvj max  
VDSM  
1500 V  
1700 V  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
230 A  
142 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
TC = 85°C  
4800 A  
4100 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
115000 A²s  
84000 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 747-6 f = 50 Hz,  
150 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
i
GM = 0,6 A, diG/dt = 0,6 A/µs  
critical rate of rise of on-state current  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
6.Kennbuchstabe / 6th letter F  
1000 V/µs  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
max.  
1,56 V  
0,9 V  
Tvj = Tvj max , iT = 500 A  
Tvj = Tvj max  
vT  
on-state voltage  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Zündstrom  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
V(TO)  
rT  
1,1 mΩ  
150 mA  
2 V  
Tvj = Tvj max  
max.  
max.  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6 V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
max.  
Tvj = Tvj max , vD = 6 V  
Tvj = Tvj max , vD = 0,5 VDRM  
Tvj = Tvj max , vD = 0,5 VDRM  
10 mA  
5 mA  
0,25 V  
max.  
max.  
max.  
Haltestrom  
holding current  
Einraststrom  
latching current  
Tvj = 25°C, vD = 6 V, RA = 5 Ω  
200 mA  
800 mA  
Tvj = 25°C, vD = 6 V, RGK 10 Ω  
IL  
iGM = 0,6 A, diG/dt = 0,6 A/µs,  
tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Zündverzug  
gate controlled delay time  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
30 mA  
3 µs  
vD = VDRM, vR = VRRM  
DIN IEC 747-6 Tvj = 25 °C,  
i
GM = 0,6 A, diG/dt = 0,6 A/µs  
C.Drilling  
date of publication: 03.07.02  
prepared by:  
revision:  
1
approved by: J. Novotny  
BIP AC / 22 Nov , A.Rüther  
1/12  
A70 / 95  
Seite/page  

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