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TD131N12KOC PDF预览

TD131N12KOC

更新时间: 2024-11-16 15:54:07
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
13页 453K
描述
Silicon Controlled Rectifier, 131000mA I(T), 1200V V(RRM)

TD131N12KOC 技术参数

生命周期:Active零件包装代码:MODULE
针数:5Reach Compliance Code:compliant
风险等级:5.74最大直流栅极触发电流:150 mA
最大直流栅极触发电压:1.4 V快速连接描述:G-GR
螺丝端子的描述:A-K-AK最大维持电流:200 mA
最大漏电流:25 mA通态非重复峰值电流:3600 A
最大通态电压:1.48 V最大通态电流:131000 A
最高工作温度:125 °C最低工作温度:-40 °C
重复峰值反向电压:1200 V子类别:Silicon Controlled Rectifiers
Base Number Matches:1

TD131N12KOC 数据手册

 浏览型号TD131N12KOC的Datasheet PDF文件第2页浏览型号TD131N12KOC的Datasheet PDF文件第3页浏览型号TD131N12KOC的Datasheet PDF文件第4页浏览型号TD131N12KOC的Datasheet PDF文件第5页浏览型号TD131N12KOC的Datasheet PDF文件第6页浏览型号TD131N12KOC的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor-Modul  
TT131N  
Phase Control Thyristor Module  
TT131N  
TD131N  
DT131N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
1200  
1200  
1300  
1400 V  
1600 V  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
repetitive peak forward off-state and reverse voltages  
VDRM,VRRM  
1400 V  
1600 V  
Vorwärts-Stoßspitzensperrspannung  
Tvj = -40°C... Tvj max  
VDSM  
non-repetitive peak forward off-state voltage  
1500 V  
1700 V  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
220 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
ITRMSM  
131 A  
140 A  
Dauergrenzstrom  
TC = 85°C  
TC = 81°C  
ITAVM  
average on-state current  
3600 A  
3200 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
ITSM  
Tvj = Tvj max, tP = 10 ms  
64800 A²s  
51200 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 747-6  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
150 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
critical rate of rise of on-state current  
Kritische Spannungssteilheit  
Tvj = Tvj max, vD = 0,67 VDRM  
6.Kennbuchstabe / 6th letter C  
6.Kennbuchstabe / 6th letter F  
500 V/µs  
1000 V/µs  
critical rate of rise of off-state voltage  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
1,48 V  
0,85 V  
1,5 mΩ  
150 mA  
1,4 V  
max.  
Tvj = Tvj max , iT = 350 A  
vT  
on-state voltage  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
V(TO)  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max  
rT  
max.  
max.  
Zündstrom  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6 V  
IGT  
VGT  
IGD  
VGD  
IH  
gate trigger current  
Zündspannung  
gate trigger voltage  
max.  
max.  
Nicht zündender Steuerstrom  
gate non-trigger current  
Tvj = Tvj max , vD = 6 V  
5,0 mA  
2,5 mA  
Tvj = Tvj max , vD = 0,5 VDRM  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max , vD = 0,5 VDRM  
max.  
max.  
max.  
max.  
max.  
0,2 V  
200 mA  
620 mA  
25 mA  
3 µs  
Haltestrom  
Tvj = 25°C, vD = 6 V, RA = 5 Ω  
Tvj = 25°C, vD = 6 V, RGK 10 Ω  
holding current  
Einraststrom  
IL  
latching current  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Tvj = Tvj max  
iD, iR  
vD = VDRM, vR = VRRM  
Zündverzug  
DIN IEC 747-6  
tgd  
gate controlled delay time  
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs  
C.Drilling  
date of publication:  
revision:  
15.05.02  
2
prepared by:  
approved by: J. Novotny  
A 04/02  
1/12  
BIP AC 15.05.2002; Drilling  
Seite/page  

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