Datasheet > TCS1200_09

TCS1200_09

更新时间： 2024-11-18 08:51:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		脉冲电子航空
页数	文件大小	规格书
4页	101K
描述
1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz

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TCS1200_09 数据手册

TCS1200

1200 Watts, 53 Volts

Pulsed Avionics at 1030 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55TU-1

The TCS1200 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems at 1030 MHz, with the pulse width and duty

required for TCAS applications. The device has gold thin-film metalization and

emitter ballasting for proven highest MTTF. The transistor includes input and

output prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C¹

2095 W

Maximum Voltage and Current

Collector to Base Voltage (BV_ces)

65 V

3.5 V

60 A

Emitter to Base Voltage (BV_ebo

Collector Current (I_c)

)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +200 °C

+200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

P_g

Power Out

1200

10.2

Pulse Width = 32µs

Duty Factor = 2%

Power Gain

Collector Efficiency

F = 1030 MHz, V_cc= 53 Volts

Pin = 115 Watts

η_c

R_L

Return Loss

-10

Rise Time

100

0.5

Pulse Droop

VSWR

Load Mismatch Tolerance¹

2.5:1

FUNCTIONAL CHARACTERISTICS @ 25°C

BV_ebo

BV_ces

h_FE

θjc¹

Emitter to Base Breakdown

Ie = 40 mA

3.5

Collector to Emitter Breakdown Ic = 100 mA

DC – Current Gain

Thermal Resistance

Vce = 5V, Ic = 1A

0.012

°C/W

Rev B April, 2009

NOTES: 1. At rated output power and pulse conditions

See plots below for Mode S data at 50V as well as the standard 32us,2% data at 53V

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

12 3 4

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